Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision P)
Values are for the MT41K512M8 DDR3L SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8)
component data sheet
Parameter Symbol 1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
261 252 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
396 387 mA
Precharge power-down current: Slow exit I
DD2P0
99 90 mA
Precharge power-down current: Fast exit I
DD2P1
99 99 mA
Precharge quiet standby current I
DD2Q
135 135 mA
Precharge standby current I
DD2N
153 144 mA
Precharge standby ODT current I
DD2NT
198 180 mA
Active power-down current I
DD3P
135 135 mA
Active standby current I
DD3N
189 180 mA
Burst read operating current I
DD4R
918 810 mA
Burst write operating current I
DD4W
1017 909 mA
Refresh current I
DD5B
1368 1368 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
135 135 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
207 207 mA
All banks interleaved read current I
DD7
1314 1170 mA
Reset current I
DD8
117 117 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83b4fcd7
jsf9c128_256_512x72pz.pdf - Rev. J 8/15
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.