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SQ4401EY-T1_GE3

P1-P3P4-P6P7-P9P10-P10
SQ4401EY
www.vishay.com
Vishay Siliconix
S11-2109 Rev. B, 31-Oct-11
4
Document Number: 65901
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Breakdown Voltage vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 10.5 A
V
GS
=10V
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
- Junction Temperature (°C)
BVDSX
- 50
- 48
- 46
- 44
- 42
- 40
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=1mA
0.00
0.02
0.04
0.06
0.08
0.10
0246810
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
SQ4401EY
www.vishay.com
Vishay Siliconix
S11-2109 Rev. B, 31-Oct-11
5
Document Number: 65901
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 s, DC
Limited by R *
DS(on)
100 ms
1s
10 ms
1 ms
I
DM
Limited
100 µs
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 84 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
SQ4401EY
www.vishay.com
Vishay Siliconix
S11-2109 Rev. B, 31-Oct-11
6
Document Number: 65901
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65901
.
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
Single Pulse
0.02
P1-P3P4-P6P7-P9P10-P10

SQ4401EY-T1_GE3

Mfr. #:
Buy SQ4401EY-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 17.3A 7.14W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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