SQ4401EY-T1_GE3

SQ4401EY-T1_GE3
Mfr. #:
SQ4401EY-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 17.3A 7.14W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Datasheet:
SQ4401EY-T1_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQ4401EY-T1_GE3 DatasheetSQ4401EY-T1_GE3 Datasheet (P4-P6)SQ4401EY-T1_GE3 Datasheet (P7-P9)SQ4401EY-T1_GE3 Datasheet (P10)
ECAD Model:
More Information:
SQ4401EY-T1_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
17.3 A
Rds On - Drain-Source Resistance:
11 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
115 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
7.14 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Series:
SQ
Transistor Type:
1 P-Channel
Width:
3.9 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
30 S
Fall Time:
44 ns
Product Type:
MOSFET
Rise Time:
76 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
67 ns
Typical Turn-On Delay Time:
58 ns
Unit Weight:
0.017870 oz
Tags
SQ4401EY-T1, SQ4401EY-T, SQ4401EY, SQ4401E, SQ440, SQ44, SQ4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 40V 17.3A Automotive 8-Pin SOIC N T/R
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***eco
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Trans MOSFET N-CH 40V 18A 8-Pin SOIC N T/R / MOSFET N-CH 40V 18A 8-SOIC
***ark
N Channel Mosfet, 40V, 18A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.005Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: Yes
*** Stop Electro
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***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
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Trans MOSFET N-CH 40V 12.8A 8-Pin SOIC T/R / MOSFET N-CH 40V 12.8A 8-SOIC
***emi
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***enic
40V 12.8A 10.5m¦¸@10V,12.8A 2.5W 3V@250¦ÌA N Channel SOIC-8_150mil MOSFETs ROHS
***rchild Semiconductor
This single N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.8A; Drain Source Voltage Vds:40V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:12.8A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***p One Stop Global
Trans MOSFET N-CH 40V 20.7A Automotive 8-Pin SOIC N T/R
***ark
N-Channel 40-V (D-S) 175C Mosfet Rohs Compliant: No
***mal
SOIC8 40V N-CH. 4.5V RATED TRENCH
***ment14 APAC
MOSFET,N CH,W DIODE,40V,20.7A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:7.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
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Trans MOSFET N-CH 30V 20A 8-Pin PowerPAK SO EP T/R
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N CHANNEL MOSFET, 30V, 20A, SOIC; Transi; N CHANNEL MOSFET, 30V, 20A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 15mohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs Typ: 2.5V
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***nell
MOSFET, N, SMD, FLMP, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:13A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.9V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:60A; No. of Pins:8; Power Dissipation:3.9mW; Voltage, Vds Max:40V
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Part # Mfg. Description Stock Price
SQ4401EY-T1-GE3
DISTI # V36:1790_09219182
Vishay IntertechnologiesTrans MOSFET P-CH 40V 17.3A Automotive 8-Pin SOIC N T/R
RoHS: Compliant
5000
  • 1250000:$1.1730
  • 250000:$1.1930
  • 25000:$1.2160
  • 2500:$1.2190
SQ4401EY-T1-GE3
DISTI # V72:2272_09219182
Vishay IntertechnologiesTrans MOSFET P-CH 40V 17.3A Automotive 8-Pin SOIC N T/R
RoHS: Compliant
3853
  • 3000:$1.2581
  • 1000:$1.3136
  • 500:$1.6838
  • 250:$2.0809
  • 100:$2.1580
  • 25:$2.4086
  • 10:$2.6762
  • 1:$3.2765
SQ4401EY-T1_GE3
DISTI # SQ4401EY-T1_GE3CT-ND
Vishay SiliconixMOSFET P-CH 40V 17.3A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
963In Stock
  • 1000:$1.3486
  • 500:$1.6277
  • 100:$1.9811
  • 10:$2.4650
  • 1:$2.7400
SQ4401EY-T1_GE3
DISTI # SQ4401EY-T1_GE3DKR-ND
Vishay SiliconixMOSFET P-CH 40V 17.3A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
963In Stock
  • 1000:$1.3486
  • 500:$1.6277
  • 100:$1.9811
  • 10:$2.4650
  • 1:$2.7400
SQ4401EY-T1_GE3
DISTI # SQ4401EY-T1_GE3TR-ND
Vishay SiliconixMOSFET P-CH 40V 17.3A
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 5000:$1.1739
  • 2500:$1.2190
SQ4401EY-T1-GE3
DISTI # 27565888
Vishay IntertechnologiesTrans MOSFET P-CH 40V 17.3A Automotive 8-Pin SOIC N T/R
RoHS: Compliant
3853
  • 6:$3.2765
SQ4401EY-T1_GE3
DISTI # SQ4401EY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 40V 17.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SQ4401EY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
    SQ4401EY-T1_GE3
    DISTI # SQ4401EY-T1_GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 40V 17.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SQ4401EY-T1_GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 10000:$1.0900
    • 15000:$1.0900
    • 25000:$1.0900
    • 2500:$1.1900
    • 5000:$1.1900
    SQ4401EY-T1_GE3
    DISTI # SQ4401EY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 40V 17.3A 8-Pin SOIC N T/R (Alt: SQ4401EY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.6759
    • 15000:€0.7069
    • 10000:€0.7999
    • 5000:€0.9859
    • 2500:€1.3749
    SQ4401EY-T1_GE3
    DISTI # 76Y1625
    Vishay IntertechnologiesP-CHANNEL 40-V (D-S) 175C MOSFET0
    • 10000:$1.0800
    • 6000:$1.1200
    • 4000:$1.1700
    • 2000:$1.2900
    • 1000:$1.3600
    • 1:$1.4500
    SQ4401EY-T1-GE3
    DISTI # 70617445
    Vishay SiliconixSQ4401EY-T1-GE3 P-channel MOSFET Transistor,17 A,40 V,8-Pin SOIC
    RoHS: Compliant
    0
    • 100:$1.2900
    • 500:$1.0900
    • 1500:$1.0000
    • 2500:$0.9400
    SQ4401EY-T1_GE3
    DISTI # 78-SQ4401EY-T1_GE3
    Vishay IntertechnologiesMOSFET 40V 17.3A 7.14W AEC-Q101 Qualified
    RoHS: Compliant
    8914
    • 1:$3.0100
    • 10:$2.7000
    • 100:$2.1800
    • 500:$1.6900
    • 1000:$1.4000
    • 2500:$1.2600
    • 5000:$1.2100
    SQ4401EY-T1-GE3
    DISTI # 78-SQ4401EY-T1-GE3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQ4401EY-T1_GE3
    RoHS: Compliant
    0
      SQ4401EY-T1_GE3
      DISTI # 8193917
      Vishay IntertechnologiesTRANS MOSFET P-CH 40V 17.3A, PK400
      • 200:£1.2620
      • 100:£1.3760
      • 10:£1.7220
      SQ4401EY-T1_GE3
      DISTI # 8193917P
      Vishay IntertechnologiesTRANS MOSFET P-CH 40V 17.3A, RL500
      • 200:£1.2620
      • 100:£1.3760
      SQ4401EY-T1-GE3
      DISTI # 1869891
      Vishay IntertechnologiesMOSFET,P CH,W DIODE,40V,17.3A,SO8
      RoHS: Compliant
      0
      • 1000:$1.2600
      • 500:$1.4200
      • 100:$1.6800
      • 50:$1.8600
      • 10:$2.0000
      • 1:$2.1200
      SQ4401EY-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQ4401EY-T1_GE3
      RoHS: Compliant
      Americas -
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        Availability
        Stock:
        Available
        On Order:
        1991
        Enter Quantity:
        Current price of SQ4401EY-T1_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $3.01
        $3.01
        10
        $2.70
        $27.00
        100
        $2.18
        $218.00
        500
        $1.69
        $845.00
        1000
        $1.40
        $1 400.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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