© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 3
1 Publication Order Number:
NCN5150/D
NCN5150
Wired M-BUS Slave
Transceiver
Description
The NCN5150 is a single-chip integrated slave transceiver for use in
two-wire Meter Bus (M-BUS) slave devices and repeaters. The
transceiver provides all of the functions needed to satisfy the
European Standards EN 13757−2 and EN 1434−3 describing the
physical layer requirements for M-BUS. It includes a programmable
power level of up to 2 (SOIC version) or 6 (NQFP version) unit loads,
which are available for use in external circuits through a 3.3 V LDO
regulator.
The NCN5150 can provide communication up to the maximum
M-BUS communication speed of 38,400 baud (half-duplex).
Features
Single-chip MBUS Transceiver
UART Communication Speeds Up to 38,400 baud
Integrated 3.3 V VDD LDO Regulator with Extended Peak Current
Capability of 15 mA
Supports Powering Slave Device from the Bus or from External
Power Supply
Adjustable I/O Levels
Adjustable Constant Current Sink up to 2 or 6 Unit Loads Depending
on the Package
Low Bus Voltage Operation
Extended Current Budget for External Circuits: at least 0.88 mA
Polarity Independent
Power-Fail Function
Fast Startup − No External Transistor Required on STC Pin
Industrial Ambient Temperature Range of −40°C to +85°C
Available in:
16-pin SOIC (Pin-to-Pin Compatible with TSS721A)
20-pin QFN
These are Pb-free Devices
Typical Applications
Multi-energy Utility Meters
Water
Gas
Electricity
Heating systems
Related Standards − European Standard
EN 13757−2, EN 1434−3
For more information visit www.m
-bus.com
MARKING DIAGRAMS
SOIC−16
D SUFFIX
CASE 751B
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
www.
onsemi.com
NCN5150
ALYYWWG
1
16
NQFP−20
MN SUFFIX
CASE 485E
A = Assembly Location
L = Wafer Lot (optional)
Y, YY = Year
W, WW = Work Week
G or G = Pb-free Package
NCN
5150
ALYW
G
1
20
NQFP−20
SOIC−16
NCN5150
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2
17
10
16
15
14
13
12
115
NCN5150
QFN20
1
RIS
GND
2
3
4
20 19 18
678
9
BUSL1
BUSL2
RXI
RX
VDD
VB
VIO
STC
RIDD
PFb
SC
VS
NCN5150
SOIC16
1
2
3
4RIDD
STC
VB
BUSL2
5PFb
6
7
8TX
TXI
SC
16
15
14
13 RXI
RIS
GND
BUSL1
12 RX
11
10
9 VIO
VS
VDD
TX
TXI
Figure 1. Pin Out NCN5150 in 20-pin NQFP and 16 Pin SOIC (Top View)
Table 1. NCN5150 PINOUT
Signal Name Type
Pin Number
Pin Description
NCN5150 SOIC NCN5150 QFN
BUSL1 Bus 16 2 MBUS line. Connect to bus through 220 W series resistors.
Connections are polarity independent
BUSL2 Bus 1 3
VB Power 2 4 Rectified bus voltage
STC Output 3 6 Storage capacitor pin. Connect to bulk storage capacitor
(minimum 10 mF, maximum 330 mF−2,700 mF − see Table 9)
RIDD Input 4 7 Mark current adjustment pin.
Connect to programming resistor
PFb Output 5 8 Power Fail, active low
SC Output 6 9 Mark bus voltage level storage capacitor pin.
Connect to ceramic capacitor (typically 220 nF)
TXI Output 7 11 UART Data output (inverted)
TX Output 8 12 UART Data output
VIO Input 9 13 I/O pins (RX, RXI, TX, TXI, PFb) high level voltage
VS Output 10 14 Gate driver for PMOS switch between bus powered operation
and external power supply
VDD Power 11 16 Voltage regulator output.
Connect to minimum 1 mF decoupling capacitor
RX Input 12 17 UART Data input
RXI Input 13 18 UART Data input (inverted)
RIS Input 14 20 Modulation current adjustment pin
GND Ground 15 1 Ground
NC NC 5, 10, 15, 19 Not connected pins. Tie to GND
EP Ground EP Exposed Pad. Tie to GND
NCN5150
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3
Figure 2. NCN5150 Block Diagram
POR
3.3 V
LDO
STC
Clamp
STC
Voltage
Monitor
VS
Driver
Receiver
Transmitter
Power
Fail
Detect
VIO
VB
RIDD
STC
VS
VDD
PFb
BUSL1
BUSL2
SC
TX
RX
GND
RIS
VIO_BUF
CS1
CS_TX
ECHO
VB_INT
VIO_BUF
NCN5150
Thermal
Shutdown
VIO
Buffer
RXI
TXI
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter Min Max Unit
T
J
Junction Temperature −40 +150 °C
T
S
Storage Temperature −55 +150 °C
V
BUS
Bus Voltage (|BUSL1 − BUSL2|) −50 50 V
V
TX
, V
TXI
Voltage on Pin TX, TXI −0.3 7.5 V
V
RX
, V
RXI
, V
IO
Voltage on Pin RX, RXI, VIO −0.3 5.5 V
ESD
HBM
ESD Rating − Human Body Model 4.0 kV
ESD
MM
ESD Rating − Machine Model 250 V
ESD
CDM
ESD Rating − Charged Device Model 750 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. All voltages are referenced to GND.

NCN5150DR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Interface - Specialized NCN5150 SOIC OAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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