High Isolation, Nonreflective,
GaAs, SPDT Switch,100 MHz to 4 GHz
Data Sheet
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
33.5 dBm through path
26.5 dBm terminated path
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad
(MINI_SO_EP)
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment
FUNCTIONAL BLOCK DIAGRAM
HMC349AMS8G
RF2
RF1
50Ω
50Ω
VDD
RFC
EN
CTRL
GND
DRIVER
15025-001
Figure 1.
GENERAL DESCRIPTION
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-
morphic high electron mobility transistor (PHEMT), single-pole,
double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure
applications by yielding high isolation of 57 dB, low insertion
loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB
of 34 dBm.
The HMC349AMS8G operates with a single positive supply
voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible
control interface.
The HMC349AMS8G comes in an 8-lead mini small outline
package with an exposed pad.
