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MPR121QR2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27
MPR121
Sensors
Freescale Semiconductor, Inc. 7
ELE3 Electrode Current CDC3 0x62 0x00
Register
Address + 1
ELE4 Electrode Current CDC4 0x63 0x00
ELE5 Electrode Current CDC5 0x64 0x00
ELE6 Electrode Current CDC6 0x65 0x00
ELE7 Electrode Current CDC7 0x66 0x00
ELE8 Electrode Current CDC8 0x67 0x00
ELE9 Electrode Current CDC9 0x68 0x00
ELE10 Electrode Current CDC10 0x69 0x00
ELE11 Electrode Current CDC11 0x6A 0x00
ELEPROX Electrode Current CDCPROX 0x6B 0x00
ELE0, ELE1 Charge Time CDT1 CDT0 0x6C 0x00
ELE2, ELE3 Charge Time CDT3 CDT2 0x6D 0x00
ELE4, ELE5 Charge Time CDT5 CDT4 0x6E 0x00
ELE6, ELE7 Charge Time CDT7 CDT6 0x6F 0x00
ELE8, ELE9 Charge Time CDT9 CDT8 0x70 0x00
ELE10, ELE11 Charge Time CDT11 CDT10 0x71 0x00
ELEPROX Charge Time CDTPROX 0x72 0x00
GPIO Control Register 0 CTL011 CTL010 CTL09 CTL08 CTL07 CTL06 CTL05 CTL04 0x73 0x00
GPIO Control Register 1 CTL111 CTL110 CTL19 CTL18 CTL17 CTL16 CTL15 CTL14 0x74 0x00
GPIO Data Register DAT11 DAT10 DAT9 DAT8 DAT7 DAT6 DAT5 DAT4 30x75 0x00
GPIO Direction Register DIR11 DIR10 DIR9 DIR8 DIR7 DIR6 DIR5 DIR4 0x76 0x00
GPIO Enable Register EN11 EN10 EN9 EN8 EN7 EN6 EN5 EN4 0x77 0x00
GPIO Data Set Register SET11 SET10 SET9 SET8 SET7 SET6 SET5 SET4 0x78 0x00
GPIO Data Clear Register CLR11 CLR10 CLR9 CLR8 CLR7 CLR6 CLR5 CLR4 0x79 0x00
GPIO Data Toggle Register TOG11 TOG10 TOG9 TOG8 TOG7 TOG6 TOG5 TOG4 0x7A 0x00
AUTO-CONFIG Control Register 0 FFI RETRY BVA ARE ACE 0x7B 0x00
AUTO-CONFIG Control Register 1 SCTS OORIE ARFIE ACFIE 0x7C 0x00
AUTO-CONFIG USL Register USL 0x7D 0x00
AUTO-CONFIG LSL Register LSL 0x7E 0x00
AUTO-CONFIG Target Level Register TL 0x7F 0x00 0x00
Soft Reset Register SRST 0x80
Table 2. Register Map
REGISTER Fields
Register
Address
Initial
Value
Auto-
Increment
Address
MPR121
Sensors
8 Freescale Semiconductor, Inc.
4 Electrical Characteristics
4.1 Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table 3 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high-static
voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher
than maximum-rated voltages to this high-impedance circuit.
4.2 ESD and Latch-up Protection Characteristics
Normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without
suffering any permanent damage. During the device qualification, ESD stresses were performed for the Human Body Model
(HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses, the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 3. Absolute Maximum Ratings - Voltage (with respect to V
SS
)
Rating Symbol Value Unit
Supply Voltage
V
DD
-0.3 to +3.6 V
Supply Voltage
V
REG
-0.3 to +2.75 V
Input Voltage
SCL, SDA, IRQ
V
IN
V
SS
- 0.3 to V
DD
+ 0.3
V
Operating Temperature Range
T
O
-40 to +85 °C
GPIO Source Current per Pin
i
GPIO
12 mA
GPIO Sink Current per Pin
i
GPIO
1.2 mA
Storage Temperature Range
T
S
-40 to +125 °C
Table 4. ESD and Latch-up Test Conditions
Rating Symbol Value Unit
Human Body Model (HBM)
V
ESD
±2000 V
Machine Model (MM)
V
ESD
±200 V
Charge Device Model (CDM)
V
ESD
±500 V
Latch-up current at T
A
= 85°C I
LATCH
±100 mA
MPR121
Sensors
Freescale Semiconductor, Inc. 9
4.3 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
4.4 AC Characteristics
Table 5. DC Characteristics
(Typical Operating Circuit, V
DD
and V
REG
= 1.8V, T
A
= 25°C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Units
High Supply Voltage
V
DD
2.0 3.3 3.6 V
Low Supply Voltage
V
REG
1.71 1.8 2.75 V
Average Supply Current
(1)
1.: ECR set to 0x2C and all 12 channels plus one proximity channel activated. Measurement current CDC is set at maximum of 0x3F.
I
DD
Run Mode @ 1 ms sample period 393 μA
Run Mode @ 2 ms sample period 199 μA
Run Mode @ 4 ms sample period 102 μA
Run Mode @ 8 ms sample period 54 μA
Run Mode @ 16 ms sample period 29 μA
Run Mode @ 32 ms sample period 17 μA
Run Mode @ 64 ms sample period 11 μA
Run Mode @ 128 ms sample period 8 μA
Measurement Supply Current
I
DD
Peak of measurement duty cycle 1 mA
Idle Supply Current
I
DD
Stop Mode 3 μA
Input Leakage Current ELE_
I
IH
, I
IL
0.025 μA
Input Self-Capacitance on ELE_ 15 pF
Input High Voltage SDA, SCL
V
IH
0.7 x V
DD
V
Input Low Voltage SDA, SCL
V
IL
0.3 x V
DD
V
Input Leakage Current
SDA, SCL
I
IH
, I
IL
0.025 1 μA
Input Capacitance
SDA, SCL
7pF
Output Low Voltage
SDA, IRQ
V
OL
I
OL
= 6mA
0.5V V
Output High Voltage
ELE4 - ELE11 (GPIO mode)
V
OHGPIO
V
DD
= 2.7V to 3.6V: I
OHGPIO
= -10 mA
V
DD
= 2.3V to 2.7V: I
OHGPIO
= -6 mA
V
DD
= 1.8V to 2.3V: I
OHGPIO
= -3 mA
V
DD
- 0.5
V
Output Low Voltage
ELE4 - ELE11 (GPIO mode)
V
OLGPIO
I
OLGPIOD
= 1 mA
0.5 V
Power On Reset
V
TLH
V
DD
rising
1.08 1.35 1.62 V
V
THL
V
DD
falling
0.88 1.15 1.42 V
Table 6. AC Characteristics
(Typical Operating Circuit, V
DD
and V
REG
= 1.8V, T
A
= 25°C, unless otherwise noted.)
Parameter Symbol Conditions Min Typ Max Units
8 MHz Internal Oscillator
f
H
7.44 8 8.56 MHz
1 kHz Internal Oscillator
f
L
0.65 1 1.35 kHz
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27

MPR121QR2

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Manufacturer:
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Description:
Capacitive Touch Sensors Low Voltage Touch Pad
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