2N6426G Datasheet 2N6426G, 2N6427RLRAG, 2N6427G | P1-P3

March, 2007 − Rev. 3

1 Publication Order Number:

2N6426/D

2N6426, 2N6427

2N6426 is a Preferred Device

Darlington Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

40 Vdc

Collector − Base Voltage V

CBO

40 Vdc

Emitter − Base Voltage V

EBO

12 Vdc

Collector Current − Continuous I

C

500 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

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COLLECTOR 3

BASE

2

EMITTER 1

MARKING DIAGRAM

2N

642x

AYWW G

G

x = 6 or 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

2N6426, 2N6427

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2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage, (Note 1)

(I

C

= 10 mAdc, V

BE

= 0)

V

(BR)CEO

40 − − Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0)

V

(BR)CBO

40 − − Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

12 − − Vdc

Collector Cutoff Current

(V

CE

= 25 Vdc, I

B

= 0)

I

CES

− − 1.0

mAdc

Collector Cutoff Current

(V

CB

= 30 Vdc, I

E

= 0)

I

CBO

− − 50 nAdc

Emitter Cutoff Current

(V

EB

= 10 Vdc, I

C

= 0)

I

EBO

− − 50 nAdc

ON CHARACTERISTICS

DC Current Gain, (Note 1)

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc) 2N6426

2N6427

(I

C

= 100 mAdc, V

CE

= 5.0 Vdc) 2N6426

2N6427

(I

C

= 500 mAdc, V

CE

= 5.0 Vdc) 2N6426

2N6427

h

FE

20,000

10,000

30,000

20,000

14,000

−

200,000

100,000

300,000

200,000

140,000

−

Collector−Emitter Saturation Voltage

(I

C

= 50 mAdc, I

B

= 0.5 mAdc)

(I

C

= 500 mAdc, I

B

= 0.5 mAdc

V

CE(sat)

−

0.71

0.9

1.2

1.5

Vdc

Base−Emitter Saturation Voltage

(I

C

= 500 mAdc, I

B

= 0.5 mAdc)

V

BE(sat)

− 1.52 2.0 Vdc

Base−Emitter On Voltage

(I

C

= 50 mAdc, V

CE

= 5.0 Vdc)

V

BE(on)

− 1.24 1.75 Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

obo

− 5.4 7.0 pF

Input Capacitance

(V

EB

= 1.0 Vdc, I

C

= 0, f = 1.0 MHz)

C

ibo

− 10 15 pF

Input Impedance

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz) 2N6426

2N6427

h

ie

100

50

−

2000

1000

kW

Small−Signal Current Gain

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz) 2N6426

2N6427

hfe

20,000

10,000

−

Current−Gain − High Frequency

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc, f = 100 MHz) 2N6426

2N6427

|h

fe

|

1.5

1.3

2.4

−

Output Admittance

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc, f = 1.0 kHz)

h

oe

− − 1000

mmhos

Noise Figure

(I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc, R

S

= 100 kW, f = 1.0 kHz)

NF − 3.0 10 dB

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2N6426, 2N6427

http://onsemi.com

3

R

S

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

NOISE CHARACTERISTICS

(V

CE

= 5.0 Vdc, T

A

= 25°C)

Figure 2. Noise Voltage

f, FREQUENCY (Hz)

50

100

200

500

20

Figure 3. Noise Current

f, FREQUENCY (Hz)

Figure 4. Total Wideband Noise Voltage

R

S

, SOURCE RESISTANCE (kW)

Figure 5. Wideband Noise Figure

R

S

, SOURCE RESISTANCE (kW)

5.0

50

70

100

200

30

10

20

1.0

10

20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

BANDWIDTH = 1.0 Hz

R

S

≈ 0

I

C

= 1.0 mA

100 mA

10 mA

BANDWIDTH = 1.0 Hz

I

C

= 1.0 mA

100 mA

10 mA

e

n

, NOISE VOLTAGE (nV)

i

n

, NOISE CURRENT (pA)

2.0 5.0 10 20 50 100 200 500 1000

BANDWIDTH = 10 Hz TO 15.7 kHz

I

C

= 10 mA

100 mA

1.0 mA

8.0

10

12

14

6.0

0

4.0

1.0 2.0 5.0 10 20 50 100 200 500 1000

2.0

BANDWIDTH = 10 Hz TO 15.7 kHz

10 mA

100 mA

I

C

= 1.0 mA

V

T

, TOTAL WIDEBAND NOISE VOLTAGE (nV)

NF, NOISE FIGURE (dB)

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

2N6426G

2N6426G

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