2N6426G

2N6426, 2N6427
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4
SMALL−SIGNALCHARACTERISTICS
Figure 6. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
2.0
200k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
T
J
= 25°C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALL−SIGNAL CURRENT GAIN
h
FE
, DC CURRENT GAIN
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
C
ibo
C
obo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25°C
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k
7.0 10 20 30 50 70 100 200 300
500
T
J
= 125°C
25°C
−55°C
V
CE
= 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
T
J
= 25°C
I
C
=
10 mA
50 mA 250 mA 500 mA
Figure 10. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
1.6
5.0
−1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
7.0 10 20 30 50 70 100 200 300 500
V
BE(sat)
@ I
C
/I
B
= 1000
R
V
, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
T
J
= 25°C
V
BE(on)
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 1000
−2.0
−3.0
−4.0
−5.0
−6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
25°C TO 125°C
−55°C TO 25°C
*R
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE
25°C TO 125°C
−55°C TO 25°C
*APPLIES FOR I
C
/I
B
h
FE
/3.0
2N6426, 2N6427
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5
Figure 12. Thermal Response
t, TIME (ms)
1.0
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 13. Active Region Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0k
0.4
700
500
300
200
100
70
50
30
20
10
0.6 1.0 2.0 4.0 6.0 10 20
40
I
C
, COLLECTOR CURRENT (mA)
T
A
= 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
q
JC(t)
= r(t) R
q
JC
T
J(pk)
− T
C
= P
(pk)
Z
q
JC(t)
Z
q
JA(t)
= r(t) R
q
JA
T
J(pk)
− T
A
= P
(pk)
Z
q
JA(t)
1.0 ms
100 ms
T
C
= 25°C
1.0 s
Design Note: Use of Transient
Thermal Resistance Data
FIGURE A
t
P
P
P
P
P
t
1
1/f
DUTYCYCLE + t
1
f +
t
1
t
P
PEAK PULSE POWER = P
P
ORDERING INFORMATION
Device Package Shipping
2N6426G TO−92
(Pb−Free)
5,000 Units / Bulk
2N6426RLRAG TO−92
(Pb−Free)
2,000 / Tape & Ammo
2N6427G TO−92
(Pb−Free)
5,000 Units / Bulk
2N6427RLRAG TO−92
(Pb−Free)
2,000 / Tape & Ammo
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N6426, 2N6427
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6
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE
DIM MIN MAX
MILLIMETERS
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N6426G

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Description:
Darlington Transistors 500mA 50V NPN
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