DocID026396 Rev 2 3/16
STF12N120K5, STFW12N120K5 Electrical ratings
16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220FP TO-3PF
V
GS
Gate-source voltage ± 30 V
I
D
Drain current at T
C
= 25 °C 12 A
I
D
Drain current at T
C
= 100 °C 7.6 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 48 A
P
TOT
Total dissipation at T
C
= 25 °C 40 63 W
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s, T
C
= 25 °C)
2500 3500 V
I
AR
(2)
2. Pulse width limited by T
Jmax.
Max current during repetitive or single
pulse avalanche
4A
E
AS
(3)
3. Starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V
Single pulse avalanche energy 215 mJ
dv/dt
(4)
4. I
SD
≤ 12 A, di/dt ≤ 100 A/µs, V
Peak
≤ V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
dv/dt
(5)
5. V
DS
≤ 960 V
MOSFET dv/dt ruggedness 50 V/ns
T
j
T
stg
Operating junction temperature
Storage temperature
- 55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220FP TO-3PF
R
thj-case
Thermal resistance junction-case max 3.1 1.98 °C/W
R
thj-amb
Thermal resistance junction-amb max 62.5 50 °C/W
