DocID026396 Rev 2 5/16
STF12N120K5, STFW12N120K5 Electrical characteristics
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The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD
capability of the device. The Zener voltage is appropriate for efficient and cost-effective
intervention to protect the device integrity. These integrated Zener diodes thus eliminate the
need for external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 600 V, I
D
= 6 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 20)
-23-ns
t
r
Rise time - 11 - ns
t
d(off)
Turn-off delay time - 68.5 - ns
t
f
Fall time - 18.5 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 12 A
I
SDM
Source-drain current (pulsed) - 48 A
V
SD
(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage I
SD
= 12 A, V
GS
=0 - 1.5 V
t
rr
Reverse recovery time
I
SD
= 12 A, V
DD
= 60 V
di/dt = 100 A/µs,
(see Figure 19)
- 630 ns
Q
rr
Reverse recovery charge - 12.6 µC
I
RRM
Reverse recovery current - 40 A
t
rr
Reverse recovery time I
SD
= 12 A,V
DD
= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 19)
- 892 ns
Q
rr
Reverse recovery charge - 15.6 µC
I
RRM
Reverse recovery current - 35 A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ±1 mA, I
D
= 0 30 - V
