2013 Microchip Technology Inc. DS70005124B-page 1
Features
• High Gain:
- Typically 33 dB gain across 2.4–2.5 GHz over
temperature -40°C to +85°C
• High linear output power, typical performance:
- 1.75% dynamic EVM up to 23 dBm, MCS8,
256 QAM, 40 MHz
- 2.5% EVM up to 24 dBm, 802.11n, HT40
- 3% EVM up to 25 dBm for 54 Mbps 802.11g signal
- Meets 802.11g OFDM spectrum mask require-
ment up to 28.5 dBm
- Meets 802.11b ACPR requirement up to
28.5 dBm
• High-speed power-up/down
- Turn on/off time (10%-90%) <100 ns
• 10:1 VSWR survivability (unconditionally stable
up to 28.5 dBm)
• On-chip power detection
- 20 dB dynamic range
- VSWR- and temperature-insensitive
• Simple input/output matching
• Packages available
- 16-contact UQFN (3mm x 3mm)
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• AP router
• WiMax (IEEE 802.16e)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
• 1.8-2.3 GHz femtocell base stations
Product Description
SST12CP12 is a high-power, 256 QAM power amplifier
(PA) based on the highly-reliable InGaP/GaAs HBT
technology.
Operating over the 2.4–2.5 GHz frequency band, the
PA will typically provide 33 dB gain with 25% power-
added efficiency @ P
OUT
= 28 dBm for 802.11g.
SST12CP12 has excellent linearity, providing less than
1.75%
dynamic EVM up to 23 dBm with MCS8, 40 MHz band-
width modulation. It will also provide typically 3% added
EVM at 25 dBm output power with 54 Mbps 802.11g
operation while meeting 802.11g spectrum mask at
28.5 dBm. SST12CP12 also has a single-ended power
detector for active power control.
The power amplifier IC also features high-speed
power-up/-down control with the V
REF
control pins.
SST12CP12 is offered in 16-contact UQFN package.
See Figure 2-1 for pin assignments and Table 3-1 for
pin descriptions.
SST12CP12
2.4 GHz 256 QAM High-Power Amplifier
