OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

74ABT640PW,112

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 0
1 Publication Order Number:
74HC244/D
74HC244
Octal 3−State Noninverting
Buffer/Line Driver/
Line Receiver
High−Performance Silicon−Gate CMOS
The 74HC244 is identical in pinout to the LS244. The device inputs
are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
This octal noninverting buffer/line driver/line receiver is designed
to be used with 3−state memory address drivers, clock drivers, and
other bus−oriented systems. The device has noninverting outputs and
two active−low output enables.
The HC244 is similar in function to the HC240A.
Features
• Output Drive Capability: 15 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 mA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• ESD Performance: HBM > 2000 V; Machine Model > 200 V
• Chip Complexity: 136 FETs or 34 Equivalent Gates
• This is a Pb−Free Device
http://onsemi.com
1
20
MARKING
DIAGRAM
HC
244
ALYW G
G
TSSOP−20
DT SUFFIX
CASE 948E
1
20
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
HC244 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
74HC244
http://onsemi.com
2
LOGIC DIAGRAM
DATA
INPUTS
A1
A2
A3
A4
B1
B2
B3
B4
17
15
13
11
8
6
4
218
16
14
12
9
7
5
3
YB4
YB3
YB2
YB1
YA4
YA3
YA2
YA1
NONINVERTING
OUTPUTS
PIN 20 = V
CC
PIN 10 = GND
OUTPUT
ENABLES
ENABLE A
ENABLE B
1
19
FUNCTION TABLE
Inputs Outputs
Enable A,
Enable B A, B YA, YB
LLL
LHH
HXZ
Z = high impedance
PIN ASSIGNMENT
A3
A2
YB4
A1
ENABLE A
GND
YB1
A4
YB2
YB3 5
4
3
2
1
10
9
8
7
6
14
15
16
17
18
19
20
11
12
13
YA2
B4
YA1
ENABLE B
V
CC
B1
YA4
B2
YA3
B3
ORDERING INFORMATION
Device Package Shipping
†
74HC244DTR2G TSSOP−20* 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±35 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±75 mA
P
D
Power Dissipation in Still Air, TSSOP Package† 450 mW
T
stg
Storage Temperature – 65 to + 150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(TSSOP Package) 260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
74HC244
http://onsemi.com
3
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types – 55 + 125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
(V)
– 55 to
25_C
v 85_C v 125_C
Unit
V
IH
Minimum High−Level Input Voltage V
out
= V
CC
– 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
V
IL
Maximum Low−Level Input Voltage V
out
= 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IH
|I
out
| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
in
= V
IH
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IL
|I
out
| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IL
|I
out
| v 2.4 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
OZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
6.0 ±0.5 ±5.0 ±10
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0 mA
6.0 4.0 40 40
mA
NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
P1-P3P4-P6P7-P7

74ABT640PW,112

Mfr. #:
Buy 74ABT640PW,112
Manufacturer:
NXP Semiconductors
Description:
IC TRANSCVR INVERT 5.5V 20TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet