REJ03C0368-0100, Rev.1.00, 2009.05.07
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R1WV6416R Series
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
REJ03C0368-0100
Rev.1.00
2009.05.07
Description
The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by
16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating
and battery backup are the important design objectives.
The R1WV6416R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with
pin pitch of 0.5mm], 52-pin micro thin small outline package [
µTSOP (II): 10.79mm x 10.49mm with pin pitch
of 0.4mm] and 48-ball fine pitch ball grid array [f-BGA] package. It gives the best solution for compaction of
mounting area as well as flexibility of wiring pattern of printed circuit boards.
Features
• Single 2.7~3.6V power supply
• Small stand-by current: 8 µA (3.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus
Ordering Information
Type No. Access time Package
R1WV6416RSA-5S% 55 ns
R1WV6416RSA-7S% 70 ns
12mm x 20mm 48-pin plastic TSOP (I)
(normal-bend type) (48P3R)
R1WV6416RSD-5S% 55 ns
R1WV6416RSD-7S% 70 ns
350 mil 52-pin plastic μ-TSOP (II)
(normal-bend type) (52PTG)
R1WV6416RBG-5S% 55 ns
R1WV6416RBG-7S% 70 ns
f-BGA 0.75mm pitch 48-ball
% - Temperature version; see table below
% Temperature Range
R 0 ~ +70 °C
I -40 ~ +85 °C
