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TSM6502CR RLG

P1-P3P4-P6P7-P9
TSM6502CR
Taiwan Semiconductor
1 Version: A1701
N- and P-Channel 60V (D-S) Power MOSFET
FEATURES
● Low R
DS(ON)
to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and R
g
tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC-DC Converters
● Power Routing
● Motor Drives
KEY PERFORMANCE PARAMETERS
PARAMETER
TYPE
VALUE
UNIT
V
DS
N-ch
60
V
P-ch
-60
R
DS(on)
(max)
V
GS
= 10V
N-ch
34
mΩ
V
GS
= 4.5V
40
V
GS
= -10V
P-ch
68
V
GS
= -4.5V
110
Q
g
N-ch
10.3
nC
P-ch
9.5
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
N-ch
P-ch
UNIT
Drain-Source Voltage
V
DS
60
-60
V
Gate-Source Voltage
V
GS
±20
±20
V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
24
-18
A
T
A
= 25°C
5.4
-4
Pulsed Drain Current
I
DM
96
-72
A
Single Pulse Avalanche Current
(Note 2)
I
AS
12.7
-12.7
A
Single Pulse Avalanche Energy
(Note 2)
E
AS
24
24
mJ
Total Power Dissipation
T
C
= 25°C
P
D
40
40
W
T
C
= 125°C
8.1
8.1
Total Power Dissipation
T
A
= 25°C
P
D
2
2
W
T
A
= 125°C
0.4
0.4
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Thermal Resistance – Junction to Case
R
ӨJC
3.1
°C/W
Thermal Resistance – Junction to Ambient
R
ӨJA
61
Thermal Performance Note: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design.
TSM6502CR
Taiwan Semiconductor
2 Version: A1701
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYPE
MIN
TYP
MAX
UNIT
Static
Drain-Source
Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
N-ch
60
--
--
V
V
GS
= 0V, I
D
= -250µA
P-ch
-60
--
--
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
V
GS(TH)
N-ch
1.2
1.7
2.5
V
V
GS
= V
DS
, I
D
= -250µA
P-ch
-1.2
-1.5
-2.5
Gate-Source Leakage
Current
V
GS
= ±20V, V
DS
= 0V
I
GSS
N-ch
--
--
±100
nA
V
GS
= ±20V, V
DS
= 0V
P-ch
--
--
±100
nA
Drain-Source Leakage
Current
V
GS
= 0V, V
DS
= 60V
I
DSS
N-ch
--
--
1
µA
V
GS
= 0V, V
DS
= 60V
T
J
= 125°C
--
--
100
V
GS
= 0V, V
DS
= -60V
P-ch
--
--
-1
V
GS
= 0V, V
DS
= -60V
T
J
= 125°C
--
--
-100
Drain-Source On-State
Resistance
(Note 3)
V
GS
= 10V, I
D
= 5.4A
R
DS(on)
N-ch
--
28
34
mΩ
V
GS
= 4.5V, I
D
= 4.9A
--
33
40
V
GS
= -10V, I
D
= -4A
P-ch
--
57
68
V
GS
= -4.5V, I
D
= -3.2A
--
73
110
Forward
Transconductance
(Note 3)
V
DS
= 5V, I
D
= 5.4A
g
fs
N-ch
--
19
--
S
V
DS
= -5V, I
D
= -4A
P-ch
--
11
--
Dynamic
(Note 4)
Total Gate Charge
N-ch
V
DS
= 30V, I
D
= 5.4A
P-ch
V
DS
= -30V, I
D
= -4A
Q
g(VGS=10V)
N-ch
--
20.8
--
nC
Q
g(VGS=-10V)
P-ch
--
18.1
--
Total Gate Charge
N-ch
V
DS
= 30V, I
D
= 4.9A
P-ch
V
DS
= -30V, I
D
= -3.2A
Q
g(VGS=4.5V)
N-ch
--
10.3
--
Q
g(VGS=
-
4.5V)
P-ch
--
9.5
--
Gate-Source Charge
Q
gs
N-ch
--
3.9
--
P-ch
--
2.6
--
Gate-Drain Charge
Q
gd
N-ch
--
4.2
--
P-ch
--
4.8
--
Input Capacitance
N-ch
V
GS
= 0V, V
DS
= 30V
f = 1.0MHz
P-ch
V
GS
= 0V, V
DS
= -30V
f = 1.0MHz
C
iss
N-ch
--
1159
--
pF
P-ch
--
930
--
Output Capacitance
C
oss
N-ch
--
59
--
P-ch
--
65
--
Reverse Transfer
Capacitance
C
rss
N-ch
--
15
--
P-ch
--
26
--
Gate Resistance
f = 1.0MHz
R
g
N-ch
0.6
2
4
Ω
P-ch
4.5
15
30
TSM6502CR
Taiwan Semiconductor
3 Version: A1701
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYPE
MIN
TYP
MAX
UNIT
Switching
(Note 4)
Turn-On Delay Time
N-ch
V
GS
= 10V, V
DS
= 30V,
I
D
= 5.4A, R
G
= 2Ω
P-ch
V
GS
= -10V, V
DS
= -30V,
I
D
= -4A, R
G
= 2Ω
t
d(on)
N-ch
--
7.4
--
ns
P-ch
--
4
--
Turn-On Rise Time
t
r
N-ch
--
25
--
P-ch
--
28
--
Turn-Off Delay Time
t
d(off)
N-ch
--
18
--
P-ch
--
44
--
Turn-Off Fall Time
t
f
N-ch
--
18
--
P-ch
--
44
--
Source-Drain Diode
Forward Voltage
(Note 3)
V
GS
= 0V, I
S
= 5.4A
V
SD
N-ch
--
--
1
V
V
GS
= 0V, I
S
= -4A
P-ch
--
--
-1
Reverse Recovery Time
N-ch
I
S
= 5.4A, dI/dt = 100A/μs
P-ch
I
S
= -4A, dI/dt = 100A/μs
t
rr
N-ch
--
16
--
ns
P-ch
--
13
--
Reverse Recovery
Charge
Q
rr
N-ch
--
11
--
nC
P-ch
--
7.8
--
Notes:
1. Silicon limited current only.
2. N-ch : L = 0.3mH, V
GS
= 10V, V
DD
= 25V, R
G
= 25Ω, I
AS
= 12.7A, Starting T
J
= 25°C
P-ch : L = 0.3mH, V
GS
= -10V, V
DD
= -25V, R
G
= 25Ω, I
AS
= -12.7A, Starting T
J
= 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM6502CR RLG
PDFN56 Dual
2,500pcs / 13” Reel
P1-P3P4-P6P7-P9

TSM6502CR RLG

Mfr. #:
Buy TSM6502CR RLG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET N&P Channel Power MOSFET
Lifecycle:
New from this manufacturer.
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