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TSM6502CR RLG

P1-P3P4-P6P7-P9
TSM6502CR
Taiwan Semiconductor
4 Version: A1701
CHARACTERISTICS CURVES (N-Channel)
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
, Drain to Source Voltage (V)
R
DS(ON)
, Drain-Source On-Resistance (Ω)
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
Q
g
, Gate Charge (nC)
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-Source On-Resistance (Ω)
V
GS
, Gate to Source Voltage (V)
0
2
4
6
8
10
0 5 10 15 20 25
V
DS
=30V
I
D
=5.4A
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-75 -50 -25 0 25 50 75 100 125 150
V
GS
=10V
I
D
=5.4A
0
4
8
12
16
20
0 1 2 3 4
25℃
-55℃
150℃
0
0.01
0.02
0.03
0.04
0.05
0 4 8 12 16 20
V
GS
=10V
V
GS
=4.5V
0
4
8
12
16
20
0 1 2 3 4
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=4V
V
GS
=3.5V
V
GS
=3V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
3 4 5 6 7 8 9 10
I
D
=5.4A
TSM6502CR
Taiwan Semiconductor
5 Version: A1701
CHARACTERISTICS CURVES (N-Channel)
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
I
S
, Reverse Drain Current (A)
V
SD
, Body Diode Forward Voltage (V)
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature (°C)
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
0
200
400
600
800
1000
1200
1400
1600
0 10 20 30 40 50 60
CISS
COSS
CRSS
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150
I
D
=1mA
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25℃
150℃
-55℃
0.1
1
10
100
0.1 1 10 100
R
DS(ON)
SINGLE PULSE
R
ӨJC
=3.1°C/W
T
C
=25°C
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
SINGLE PULSE
R
ӨJC
=3.1°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
TSM6502CR
Taiwan Semiconductor
6 Version: A1701
CHARACTERISTICS CURVES (P-Channel)
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
-I
D
, Continuous Drain Current (A)
-V
GS
, Gate to Source Voltage (V)
-I
D
, Continuous Drain Current (A)
-V
DS
, Drain to Source Voltage (V)
R
DS(ON)
, Drain-Source On-Resistance (Ω)
-I
D
, Drain Current (A)
-V
GS
, Gate to Source Voltage (V)
Q
g
, Gate Charge (nC)
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-Source On-Resistance (Ω)
-V
GS
, Gate to Source Voltage (V)
0
2
4
6
8
10
0 4 8 12 16 20
V
DS
=-30V
I
D
=-4A
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-75 -50 -25 0 25 50 75 100 125 150
V
GS
=-10V
I
D
=-4A
0
4
8
12
16
20
0 1 2 3 4
25℃
-55℃
150℃
0
4
8
12
16
20
0 1 2 3 4
V
GS
=-10V
V
GS
=-7V
V
GS
=-6V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
V
GS
=-3.5V
V
GS
=-4V
0
0.02
0.04
0.06
0.08
0.1
0.12
0 4 8 12 16 20
V
GS
=-10V
V
GS
=-4.5V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
3 4 5 6 7 8 9 10
I
D
=-4A
P1-P3P4-P6P7-P9

TSM6502CR RLG

Mfr. #:
Buy TSM6502CR RLG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET N&P Channel Power MOSFET
Lifecycle:
New from this manufacturer.
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