Characteristics STTH3002C
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1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P (diode 1) X R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current 50 A
I
F(AV)
Average forward current, δ = 0.5
TO-220AB, TO-247,
I
2
PAK, D
2
PA K
Per diode T
c
= 150 °C
15
A
Per device T
c
= 145 °C
30
TOP3I
Per diode T
c
= 125 °C
15
Per device T
c
= 105 °C
30
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 180 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB, TO-247, I
2
PA K, D
2
PA K
Per diode 1.5
°C/W
Total 1.0
TOP3I
Per diode 3.5
Total 2.3
R
th(c)
Coupling
TO-220AB, TO-247, I
2
PA K, D
2
PA K 0. 5
TOP3I 1.1
