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PMPB15XP
12 V, single P-channel Trench MOSFET
22 November 2012 Product data sheet
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1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.5 kV ESD protection (human body model)
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - -12 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 - 12 V
I
D
drain current V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - - -11.8 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -8.2 A; T
j
= 25 °C - 15 19
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
PMPB15XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 2 / 14
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
6
5
7
8
4
Transparent top view
1
2
3
DFN2020MD-6 (SOT1220)
S
D
G
017aaa257
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMPB15XP DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4. Marking codes
Type number Marking code
PMPB15XP 1A
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - -12 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 12 V
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - -11.8 A
V
GS
= -4.5 V; T
amb
= 25 °C [1] - -8.2 A
I
D
drain current
V
GS
= -4.5 V; T
amb
= 100 °C [1] - -5.2 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -33 A
P
tot
total power dissipation T
amb
= 25 °C [1] - 1.7 W

PMPB15XP,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET P-CH 12V 8.2A 6DFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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