71024S15TYGI

FEBRUARY 2013
DSC-2964/19
1
©2012 Integrated Device Technology, Inc.
Features
128K x 8 advanced high-speed CMOS static RAM
Commercial (0°C to +70°C), Industrial (–40°C to +85°C)
Equal access and cycle times
Commercial and Industrial: 12/15/20ns
Two Chip Selects plus one Output Enable pin
Bidirectional inputs and outputs directly
TTL-compatible
Low power consumption via chip deselect
Available in 300 and 400 mil Plastic SOJ.
Functional Block Diagram
Description
The IDT71024 is a 1,048,576-bit high-speed static RAM organized as
128K x 8. It is fabricated using high-performance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71024 has an output enable pin which operates as fast
as 6ns, with address access times as fast as 12ns available. All
bidirectional inputs and outputs of the IDT71024 are TTL-compat-
ible, and operation is from a single 5V supply. Fully static asynchro-
nous circuitry is used; no clocks or refreshes are required for
operation.
The IDT71024 is packaged in 32-pin 300 mil Plastic SOJ and 32-
pin 400 mil Plastic SOJ.
CMOS Static RAM
1 Meg (128K x 8-Bit)
IDT71024S
6.42
2
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit) Commercial and Industrial Temperature Ranges
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
Truth Table
(1,3)
Absolute Maximum Ratings
(1)
Pin Configuration
SOJ
Top View
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
NOTES:
1. H = VIH, L = VIL, X = Don't care.
2. VLC = 0.2V, VHC = VCC –0.2V.
3. Other inputs VHC or VLC.
Inputs
I/O Function
WE CS
1
CS
2
OE
X H X X High-Z Deselected – Standby (I
SB
)
XV
HC
(2)
X X High-Z Deselected – Standby (I
SB1
)
X X L X High-Z Deselected – Standby (I
SB
)
XXV
LC
(2)
X High-Z Deselected – Standby (I
SB1
)
H L H H High-Z Outputs Disabled
HLHLDATA
OUT
Read Data
LLHXDATA
IN
Write Data
2964 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC + 0.5V.
Symbol Rating Value Unit
V
TERM
(2)
Terminal Voltage with Respect to GND –0.5 to +7.0 V
T
BIAS
Temperature Under Bias –55 to +125
o
C
T
STG
Storage Temperature –55 to +125
o
C
P
T
Power Dissipation 1.25 W
I
OUT
DC Output Current 50 mA
2964 tbl 02
Grade Temperature GND V
CC
Commercial 0°C to +70°C 0V 5.0V ± 0.5V
Industrial –40°C to +85°C 0V 5.0V ± 0.5V
2964 tbl 05
NOTE:
1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5 V
GNDGround 000V
V
IH
Input High Voltage 2.2
____
V
CC
+0.5 V
V
IL
Input Low Voltage –0.5
(1)
____
0.8 V
2964 tbl 04
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 7 pF
C
I/O
I/O Capacitance V
OUT
= 3dV 8 pF
2964 tbl 03
6.42
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit) Commercial and Industrial Temperature Ranges
3
DC Electrical Characteristics
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)
DC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
Symbol Parameter Test Condition
IDT71024
Unit
Min. Max.
|I
LI
| Input Leakage Current V
CC
= Max., V
IN
= GND to V
CC
___
A
|I
LO
| Output Leakage Current V
CC
= Max., CS
1
= V
IH
, V
OUT
= GND to V
CC
___
A
V
OL
Output Low Voltage I
OL
= 8mA, V
CC
= Min.
___
0.4 V
V
OH
Output High Voltage I
OH
= –4mA, V
CC
= Min. 2.4
___
V
2964 tbl 06
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address
input lines are changing.
71024S12 71024S15 71024S20
Symbol Parameters Com'l. Ind. Com'l. Ind. Com'l. Ind. Unit
I
CC
Dynamic Operating Current,
CS
2
V
IH
and CS
1
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX
(2)
160 160 155 155 140 140 mA
I
SB
Standby Power Supply Current (TTL Level)
CS
1
V
IH
or CS
2
V
IL
, Outputs Open,
V
CC
= Max., f=f
MAX
(2)
40 40 40 40 40 40 mA
I
SB1
Full Standby Power Supply Current
(CMOS Level), CS
1
V
HC
or
CS
2
V
LC
, Outputs Open,
V
CC
= Max., f = 0
(2)
, V
IN
V
LC
or V
IN
V
HC
10 10 10 10 10 10 mA
2964 tbl 07
Figure 1. AC Test Load
Figure 2. AC Test Load
(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)
*Including jig and scope capacitance.
2964 drw 03
480Ω
255Ω30pF
DATA
OUT
5V
2964 drw 04
480Ω
255Ω5pF*
DATA
OUT
5V
Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 3ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
AC Test Load See Figures 1 and 2
2964 tbl 08
AC Test Conditions

71024S15TYGI

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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