6.42
4
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit) Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
71024S12 71024S15 71024S20
Symbol Parameter Min.Max.Min.Max.Min.Max.Unit
Read Cycle
t
RC
Read Cycle Time 12 — 15 — 20 — ns
t
AA
Address Access Time — 12 — 15 — 20 ns
t
ACS
Chip Select Access Time — 12 — 15 — 20 ns
t
CL Z
(1 )
Chip Select to Output in Low-Z 3 — 3 — 3 — ns
t
CHZ
(1)
Chip Deselect to Output in High-Z 0 6 0 7 0 8 ns
t
OE
Output Enable to Output Valid — 6 — 7 — 8 ns
t
OLZ
(1 )
Output Enab le to Output in Low-Z 0 — 0 — 0 — ns
t
OHZ
(1 )
Output Disable to Output in High-Z 0 5 0 5 0 7 ns
t
OH
Output Hold from Address Change 4 — 4 — 4 — ns
t
PU
(1)
Chip Select to Power-Up Time 0—0—0—ns
t
PD
(1)
Chip Deselect to Power-Down Time — 12 — 15 — 20 ns
Write Cycle
t
WC
Write Cycle Time 12 — 15 — 20 — ns
t
AW
Address Valid to End-of-Write 10 — 12 — 15 — ns
t
CW
Chip Select to End-of-Write 10 — 12 — 15 — ns
t
AS
Address Set-Up Time 0—0—0—ns
t
WP
Write Pulse Width 8 — 12 — 15 — ns
t
WR
Write Recovery Time 0—0—0—ns
t
DW Data Valid to End-of-Write 7—8—9—ns
t
DH
Data Hold Time 0—0—0—ns
t
OW
(1)
Output Active from End-of-Write 3 — 3 — 4 — ns
t
WHZ
(1)
Write Enable to Output in High-Z 0 5 0 5 0 8 ns
2964 tbl 09
NOTE:
1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
