ACST6-7SG Datasheet ACST610-8T, ACST610-8G, ACST610-8FP | P1-P3

July 2010 Doc ID 7297 Rev 10 1/15

15

ACST6

Overvoltage protected AC switch

Features

■ Triac with overvoltage protection

■ Low I

GT

(< 10 mA)

■ TO-220FPAB insulated package: 1500 V rms

Benefits

■ Enables equipment to meet IEC 61000-4-5

■ High off-state reliability with planar technology

■ Needs no external overvoltage protection

■ Reduces the power passive component count

■ High immunity against fast transients

described in IEC 61000-4-4 standards

Applications

■ AC mains static switching in appliance and

industrial control systems

■ Drive of medium power AC loads such as:

– Universal motor of washing machine drum

– Compressor for fridge or air conditioner

Description

The ACST6 series belongs to the ACS™/ACST

power switch family built with A.S.D.

®

(application

specific discrete) technology. This high

performance device is suited to home appliances

or industrial systems, and drives loads up to 6 A.

This ACST6 switch embeds a Triac structure and

a high voltage clamping device able to absorb the

inductive turn-off energy and withstand line

transients such as those described in the

IEC 61000-4-5 standards. The ACST610 needs

only low gate current to be activated

(I

GT

< 10 mA) and still shows a high noise

immunity complying with IEC standards such as

IEC 61000-4-4 (fast transient burst test).

Figure 1. Functional diagram

TM: ACS is a trademark of STMicroelectronics.

®: A.S.D. is a registered trademark of

STMicroelectronics

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

6A

V

DRM

/V

RRM

800 V

I

GT

10 mA

TO-220AB

ACST610-8T

TO-220FPAB

ACST610-8FP

D²PAK

ACST610-8G

I²PAK

ACST610-8R

G

OUT

COM

G

OUT

COM

G

OUT

COM

G

OUT

COM

G

COM

OUT

www.st.com

Characteristics ACST6

2/15 Doc ID 7297 Rev 10

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

On-state rms current (full sine wave)

TO-220FPAB T

c

= 92 °C

6

A

TO-220AB/

D

2

PA K / I

2

PAK

T

c

= 106 °C

D

2

PA K wi t h

1cm

2

copper

T

amb

= 62 °C 1.5

I

TSM

Non repetitive surge peak on-state current T

j

initial = 25 °C, ( full cycle sine wave)

F = 60 Hz t

p

= 16.7 ms 47 A

F = 50 Hz t

p

= 20 ms 45 A

I

2

tI

2

t for fuse selection t

p

= 10 ms 13 A

2

s

dI/dt

Critical rate of rise on-state current

I

G

= 2 x I

GT,

(t

r

≤ 100 ns)

F = 120 Hz T

j

= 125 °C 100 A/µs

V

PP

Non repetitive line peak pulse voltage

(1)

T

j

= 25 °C 2 kV

P

G(AV)

Average gate power dissipation T

j

= 125 °C 0.1 W

P

GM

Peak gate power dissipation (t

p

= 20 µs) T

j

= 125 °C 10 W

I

GM

Peak gate current (t

p

= 20 µs) T

j

= 125 °C 1.6 A

T

stg

Storage temperature range -40 to +150 °C

T

j

Operating junction temperature range -40 to +125 °C

T

l

Maximum lead solder temperature during 10 ms (at 3 mm from plastic case) 260 °C

V

INS(RMS)

Insulation rms voltage

TO-220FPAB

1500 V

1. According to test described in IEC 61000-4-5 standard and Figure 19.

Table 3. Electrical characteristics

Symbol Test conditions Quadrant T

j

Value Unit

I

GT

(1)

V

OUT

= 12 V, R

L

= 33 Ω I - II - III 25 °C MAX. 10 mA

V

GT

V

OUT

= 12 V, R

L

= 33 Ω I - II - III 25 °C MAX. 1.0 V

V

GD

V

OUT

= V

DRM

, R

L

= 3.3 kΩ I - II - III 125 °C MIN. 0.2 V

I

H

(2)

I

OUT

= 500 mA 25 °C MAX. 25 mA

I

L

I

G

= 1.2 x I

GT

I - III 25 °C MAX. 30 mA

I

L

I

G

= 1.2 x I

GT

II 25 °C MAX. 40 mA

dV/dt

(2)

V

OUT

= 67 % V

DRM

, gate open 125 °C MIN. 500 V/µs

(dI/dt)

c

(2)

(dV/dt)

c

= 15 V/µs 125 °C MIN. 3.5 A/ms

V

CL

I

CL

= 0.1 mA, t

p

= 1 ms 25 °C MIN. 850 V

1. Minimum I

GT

is guaranteed at 5% of I

GT

max

2. For both polarities of OUT pin referenced to COM pin

ACST6 Characteristics

Doc ID 7297 Rev 10 3/15

Table 4. Static characteristics

Symbol Test conditions Value Unit

V

TM

(1)

1. For both polarities of OUT pin referenced to COM pin

I

OUT

= 2.1 A, t

p

= 500 µs

T

j

= 25 °C MAX.

1.4

V

I

OUT

= 8.5 A, t

p

= 500 µs 1.7

V

T0

(1)

Threshold voltage T

j

= 125 °C MAX. 0.9 V

R

d

(1)

Dynamic resistance T

j

= 125 °C MAX. 80 mΩ

I

DRM

I

RRM

V

OUT

= V

DRM

/ V

RRM

T

j

= 25 °C MAX. 20 µA

T

j

= 125 °C MAX. 500 µA

Table 5. Thermal resistances

Symbol Parameter Value Unit

Rt

h(j-a)

Junction to ambient

TO-220AB

TO-220FPAB

60

°C/W

I

2

PAK 65

Junction to ambient (soldered on 1 cm

2

copper pad) D

2

PA K 45

R

th(j-c)

Junction to case for full cycle sine wave conduction

TO-220FPAB 4.25

°C/W

TO-220AB

D

2

PA K , I

2

PA K

2.5

Figure 2. Maximum power dissipation versus

rms on-state current

Figure 3. On-state rms current versus case

temperature (full cycle)

0

1

2

3

4

5

6

7

8

0123456

P(W)

α = 180°

I

T(RMS)

(A)

180°

0

1

2

3

4

5

6

7

0 25 50 75 100 125

I

T(RMS)

(A)

T

C

(°C)

TO-220FPAB

TO-220AB

D²PAK

I²PAK

α

= 180°

ACST6-7SG

ACST6-7SG

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