Characteristics ACST6
4/15 Doc ID 7297 Rev 10
Figure 4. On-state rms current versus
ambient temperature
(free air convection, full cycle)
Figure 5. Relative variation of thermal
impedance versus pulse duration
Figure 6. Relative variation of gate trigger
current (I
GT
) and voltage (V
GT
)
versus junction temperature
Figure 7. Relative variation of holding
current (I
H
) and latching current (I
L
)
versus junction temperature
Figure 8. Surge peak on-state current
versus number of cycles
Figure 9. Non repetitive surge peak on-state
current and corresponding value of
I
2
t versus sinusoidal pulse width
I
T(RMS)
(A)
T
a
(°C)
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125
α=180°
D
2
PAK with
copper
surface = 1
cm
2
TO-220FPAB
TO220AB
I
2
PA K
K = [Z
th
/ R
th
]
1.0E-02
1.0E-01
1.0E+00
t
p
(s)
1.0E-03 1.0E-01 1.0E+01 1.0E+03
Z
th(j-c)
Z
th(j-a)
TO-220AB
D²PAK
I²PAK
TO-220FPAB
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
I
GT
,V
GT
[T
j
] / I
GT
,V
GT
[T
j
= 25 °C]
T
j
(°C)
I
GT
Q3
I
GT
Q1-Q2
V Q1-Q2-Q3
GT
(typical values)
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]
T
j
(°C)
I
L
I
H
(typical values)
I
TSM
(A)
Number of cycles
0
10
20
30
40
50
1 10 100 1000
Number of cycles
Repetitive
T
C
=106 °C
Non repetitive
T
j
initial = 25 °C
One cycle
t = 20 ms
1
10
100
1000
0.01 0.10 1.00 10.00
dl /dt limitation: 100 A / µs
T
j
initial = 25 °C
I
TSM
I²t
I
TSM
(A), I²t (A²s)
t
p
(ms)
