Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMZB790SN
60 V, single N-channel Trench MOSFET
14 August 2012 Product data sheet
Scan or click this QR code to view the latest information for this product
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Fast switching
Trench MOSFET technology
Logic-level compatible
Ultra thin package profile of 0.37mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - 60 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 - 20 V
I
D
drain current V
GS
= 10 V; T
amb
= 25 °C [1] - - 650 mA
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 300 mA; T
j
= 25 °C - 0.79 0.94 Ω
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
PMZB790SN
60 V, single N-channel Trench MOSFET
PMZB790SN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 14 August 2012 2 / 13
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
3
1
2
Transparent
top view
DFN1006B-3 (SOT883B)
S
D
G
017aaa253
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMZB790SN DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x
0.6 x 0.37 mm
SOT883B
4. Marking
Table 4. Marking codes
Type number Marking code
PMZB790SN 0000 1100
MARKING CODE
(EXAMPLE)
PIN 1 INDICATION
READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac673
Fig. 1. DFN1006B-3 (SOT883B) binary marking code description

PMZB790SN,315

Mfr. #:
Manufacturer:
Nexperia
Description:
IGBT Transistors MOSFET 60V Single N-channel Trench MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet