NXP Semiconductors
PMZB790SN
60 V, single N-channel Trench MOSFET
PMZB790SN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 14 August 2012 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 0.1 µAI
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C - - 0.1 µA
V
GS
= 10 V; I
D
= 300 mA; T
j
= 25 °C - 0.79 0.94 Ω
V
GS
= 10 V; I
D
= 300 mA; T
j
= 150 °C - 1.46 1.74 Ω
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 75 mA; T
j
= 25 °C - 1.13 1.65 mΩ
g
fs
forward
transconductance
V
DS
= 5 V; I
D
= 300 mA; T
j
= 25 °C - 600 - mS
Dynamic characteristics
Q
G(tot)
total gate charge - 1.05 1.37 nC
Q
GS
gate-source charge - 0.2 - nC
Q
GD
gate-drain charge
V
DS
= 30 V; I
D
= 1 A; V
GS
= 10 V;
T
j
= 25 °C
- 0.22 - nC
C
iss
input capacitance - 23 35 pF
C
oss
output capacitance - 4.8 - pF
C
rss
reverse transfer
capacitance
V
DS
= 30 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 3.4 - pF
t
d(on)
turn-on delay time - 2 4 ns
t
r
rise time - 4 - ns
t
d(off)
turn-off delay time - 5 10 ns
t
f
fall time
V
DS
= 30 V; R
L
= 15 Ω; V
GS
= 10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 2.2 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 300 mA; V
GS
= 0 V; T
j
= 25 °C - 0.83 1.2 V
017aaa686
V
DS
(V)
0 321
0.4
0.6
0.2
0.8
1.0
I
D
(A)
0
10 V 5 V
4.5 V
4 V
3.5 V
V
GS
= 10 V
T
j
= 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
03an32
1E-8
1E-7
10
-6
10
-5
10
-4
10
-3
0 0.5 1 1.5 2 2.5
V
GS
(V)
I
D
(A)
min typ
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
