IXYH20N120C3 Datasheet IXYP20N120C3, IXYA20N120C3HV, IXYH20N120C3 | P1-P3

IXYA20N120C3HV

IXYP20N120C3

IXYH20N120C3

V

CES

= 1200V

I

C110

= 20A

V

CE(sat)







3.4V

t

fi(typ)

= 108ns

DS100484B(02/13)

High-Speed IGBT

for 20-50 kHz Switching

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 15 A

T

J

= 150C 500 μA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 20A, V

GE

= 15V, Note 1 3.4 V

T

J

= 150C 4.0 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 1200 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 40 A

I

C110

T

C

= 110°C 20 A

I

CM

T

C

= 25°C, 1ms 96 A

I

A

T

C

= 25°C 10 A

E

AS

T

C

= 25°C 400 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 10 I

CM

= 40 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

P

C

T

C

= 25°C 278 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-220 & TO247) 1.13/10 Nm/lb.in.

F

C

Mounting Force (TO-263) 10..65 / 22..14.6 N/lb

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

1200V XPT

TM

GenX3

TM

IGBTs

Features



High Voltage Package



Optimized for Low Switching Losses



Square RBSOA



Positive Thermal Coefficient of

Vce(sat)



Avalanche Rated



International Standard Packages

Advantages



High Power Density



Low Gate Drive Requirement

Applications



High Frequency Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

G = Gate C = Collector

E = Emitter Tab = Collector

TO-220 (IXYP)

Tab

G

C

E

TO-247 AD (IXYH)

G

C

E

Tab

G

E

TO-263HV (IXYA)

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYA20N120C3HV IXYP20N120C3

IXYH20N120C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 20A, V

CE

= 10V, Note 1 7.0 11.5 S

C

ie

s

1110 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 70 pF

C

res

27 pF

Q

g(on)

53 nC

Q

ge

I

C

= 20A, V

GE

= 15V, V

CE

= 0.5 • V

CES

9 nC

Q

gc

22 nC

t

d(on)

20 ns

t

ri

29 ns

E

on

1.3 mJ

t

d(off)

90 ns

t

fi

108 ns

E

of

f

0.5 1.0 mJ

t

d(on)

20 ns

t

ri

40 ns

E

on

3.7 mJ

t

d(off)

115 ns

t

fi

105 ns

E

off

0.7 mJ

R

thJC

0.54 °C/W

R

thCS

TO-220 0.50 °C/W

R

thCS

TO-247 0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 20A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 10

Note 2

Inductive load, T

J

= 150°C

I

C

= 20A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 10

Note 2

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

e

P

TO-247 Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitter

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Pins: 1 - Gate 2 - Collector

3 - Emitter

TO-220 Outline

TO-263HV Outline

PIN: 1 - Gate

2 - Emitter

3 - Collector

IXYA20N120C3HV IXYP20N120C3

IXYH20N120C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

00.511.522.533.544.555.56

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

10V

7V

9V

6V

8V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

12V

9V

13V

10V

7V

11V

6V

8V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

5

10

15

20

25

30

35

40

012345678

V

CE

- Volts

I

C

- Amperes

7V

6V

9V

8V

V

GE

= 15V

13V

11V

10V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 20A

I

C

= 10A

I

C

= 40A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

3

5

7

9

11

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 40A

T

J

= 25ºC

10A

20A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

40

45

50

3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

150ºC

IXYH20N120C3

IXYH20N120C3

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