© 2013 IXYS CORPORATION, All Rights Reserved
IXYA20N120C3HV IXYP20N120C3
IXYH20N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
0.4
0.8
1.2
1.6
2
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f i
- Nanoseconds
40
80
120
160
200
240
280
320
360
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
1.4
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
f i
- Nanoseconds
70
80
90
100
110
120
130
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 150ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A