2003-05-09
Page 2
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
- 0.51 0.8 K/W
Thermal resistance, junction - ambient, leaded R
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at T
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
30 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
= 130 µA
V
GS(th)
1.2 1.6 2
Zero gate voltage drain current
V
DS
=30V, V
GS
=0V, T
j
=25°C
V
DS
=30V, V
GS
=0V, T
j
=125°C
I
DSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
- 1 100 nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=80A
V
GS
=4.5V, I
D
=80A, SMD version
R
DS(on)
-
-
5
4.6
6.5
6.2
mΩ
Drain-source on-state resistance
4)
V
GS
=10V, I
D
=80A
V
GS
=10V, I
D
=80A, SMD version
R
DS(on)
-
-
3.6
3.2
4.2
3.9
1
Current limited by bondwire ; with an R
thJC
= 0.8K/W the chip is able to carry I
D
= 163A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Diagrams are related to straight lead versions
