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SPB80N03S2L-04
P1-P3
P4-P6
P7-P8
2003-05-09
Page 4
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
1 Power dissipation
P
tot
=
f
(
T
C
)
parameter:
V
GS
≥
4 V
0
20
40
60
80
100
120
140
160
°C
190
T
C
0
20
40
60
80
100
120
140
160
W
200
SPP80N03S2L-04
P
tot
2 Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V
0
20
40
60
80
100
120
140
160
°C
190
T
C
0
10
20
30
40
50
60
70
A
90
SPP80N03S2L-04
I
D
4 Max. transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP80N03S2L-04
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
SPP80N03S2L-04
I
D
R
DS(on)
=
V
DS
/
I
D
1 ms
100 µs
t
p
= 30.0
µs
2003-05-09
Page 5
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
5 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
20
40
60
80
100
120
140
160
A
190
SPP80N03S2L-04
I
D
V
GS
[V]
a
a
2.5
b
b
2.8
c
c
3.0
d
d
3.3
e
e
3.5
f
f
3.8
g
g
4.0
h
h
4.3
i
i
4.5
j
P
tot
=
188
W
j
10.0
6 Typ. drain-source on resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
0
20
40
60
80
100
A
140
I
D
0
1
2
3
4
5
6
7
8
9
10
11
12
Ω
14
SPP80N03S2L-04
R
DS(on)
V
GS
[V] =
e
e
3.5
f
f
3.8
g
g
4.0
h
h
4.3
i
i
4.5
j
j
10.0
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
0
0.5
1
1.5
2
2.5
3
3.5
V
4.5
V
GS
0
20
40
60
80
100
120
A
160
I
D
8 Typ. forward transconductance
g
fs
= f(
I
D
);
T
j
=25°C
parameter:
g
fs
0
20
40
60
80
100
120
140
160
A
200
I
D
0
5
10
15
20
25
S
35
g
fs
2003-05-09
Page 6
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
9 Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 80 A,
V
GS
= 10 V
-60
-20
20
60
100
140
°C
200
T
j
0
1
2
3
4
5
6
7
8
Ω
10
SPP80N03S2L-04
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter:
V
GS
=
V
DS
-60
-20
20
60
100
°C
180
T
j
0
0.5
1
1.5
V
2.5
V
GS(th)
130µA
650µA
11 Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0V,
f
=1 MHz
0
5
10
15
20
V
30
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j
, t
p
= 80 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
0
10
1
10
2
10
3
10
A
SPP80N03S2L-04
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
P1-P3
P4-P6
P7-P8
SPB80N03S2L-04
Mfr. #:
Buy SPB80N03S2L-04
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 80A D2PAK
Lifecycle:
New from this manufacturer.
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