AO3414
Symbol Min Typ Max Units
BV
DSS
20 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
0.4 0.7 1 V
I
D(ON)
16 A
51 62
T
J
=125°C 68 85
58 70 mΩ
68 85 mΩ
g
FS
11 S
V
SD
0.7 1 V
I
S
2 A
C
iss
260 320 pF
C
oss
48 pF
C
rss
27 pF
R
g
3 4.5 Ω
Q
g
2.9 3.8 nC
Q
gs
0.4 nC
Q
gd
0.6 nC
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=3A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250µA
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
V
GS
=2.5V, I
D
=2.8A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=3A
V
GS
=1.8V, I
D
=2.5A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=3A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
Gate Drain Charge
Rev 7: July 2010
www.aosmd.com
Page 2 of 5
t
r
3.2 ns
t
D(off)
21 ns
t
f
3 ns
t
rr
14 19
ns
Q
rr
3.8
nC
12
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=3A, dI/dt=100A/µs
I
F
=3A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=5V, V
DS
=10V, R
L
=3.3Ω,
R
GEN
=6Ω
Turn-Off Fall Time
A: The value of R
θJA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 7: July 2010
www.aosmd.com
Page 2 of 5
