AO3414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3 3.5
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
0 5 10 15 20
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
C
1
10
100
1000
Power (W)
V
DS
=10V
I
D
=3A
T
J(Max)
=150°C
T
A
=25°C
0.01
0.10
1.00
10.00
100.00
I
D
(Amps)
1ms
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
Rev 7: July 2010
www.aosmd.com
Page 4 of 5
12
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3 3.5
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
100
200
300
400
0 5 10 15 20
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
C
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
V
DS
=10V
I
D
=3A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
T
T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1ms
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
Rev 7: July 2010
www.aosmd.com
Page 4 of 5
