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NJW3281G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1 Publication Order Number:
NJW3281/D
NJW3281G (NPN)
NJW1302G (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 5 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• These Devices are Pb−Free and are RoHS Compliant
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwidth
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers
♦ Home Receivers
• Professional Audio Amplifiers
♦ Theater and Stadium Sound Systems
♦ Public Address Systems (PAs)
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
250 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
250 Vdc
Collector Current − Continuous I
C
15 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
1.6 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
200
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−  65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.625 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
40 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Device Package Shipping
ORDERING INFORMATION
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
http://onsemi.com
NJW1302G TO−3P
(Pb−Free)
30 Units/Rail
NJW3281G TO−3P
(Pb−Free)
30 Units/Rail
TO−3P
CASE 340AB
STYLES 1,2,3
xxxx = 0281 or 0302
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
NJWxxxG
AYWW
MARKING
DIAGRAM
1
2
3
4
123
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
NJW3281G (NPN) NJW1302G (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250 − −
Vdc
Collector Cutoff Current
(V
CB
= 250 Vdc, I
E
= 0)
I
CBO
− − 50
mAdc
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
I
EBO
− − 5
mAdc
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
I
S/b
4 − −
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5 Vdc)
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 3 Adc, V
CE
= 5 Vdc)
(I
C
= 5 Adc, V
CE
= 5 Vdc)
(I
C
= 8 Adc, V
CE
= 5 Vdc)
h
FE
75
75
75
60
45
−
−
−
−
−
150
150
150
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
V
CE(sat)
− 0.4 0.6
Vdc
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
− − 1.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 1 Adc, V
CE
= 5 Vdc, f
test
= 1 MHz)
f
T
− 30 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 600
pF
NJW3281G (NPN) NJW1302G (PNP)
http://onsemi.com
3
TYPICAL CHARACTERISTICS
I
C
, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
PNP NJW1302G NPN NJW3281G
I
C
, COLLECTOR CURRENT (A)
0
10
20
30
40
50
60
0.1 1 10
f
Tau
, CURRENT BANDWIDTH
PRODUCT (MHz)
V
CE
= 10 V
T
J
= 25°C
f
test
= 1 MHz
5 V
0
20
40
60
80
0.1 1 10
f
Tau
, CURRENT BANDWIDTH
PRODUCT (MHz)
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
10
100
1000
0.01 0.1 1 10 100
125°C
25°C
−30°C
V
CE
= 5 V
I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
Figure 3. DC Current Gain
10
100
1000
0.1 1 10 100
I
C
, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
125°C
25°C
−30°C
10
100
1000
0.01 0.1 1 10 100
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain
125°C
25°C
−30°C
V
CE
= 20 V
10
100
1000
0.1 1 10 10
I
C
, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain
V
CE
= 20 V
125°C
25°C
−30°C
h
FE
, DC CURRENT GAIN
P1-P3P4-P6P7-P7

NJW3281G

Mfr. #:
Buy NJW3281G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200 W BETA AUDIO
Lifecycle:
New from this manufacturer.
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