NJW3281G (NPN) NJW1302G (PNP)
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6
Figure 17. Active Region Safe Operating Area
V
CE
, COLLECTOR EMITTER (VOLTS)
Figure 18. Active Region Safe Operating Area
PNP NJW1302G NPN NJW3281G
100
1.0
0.1
1000101.0
100
10
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR EMITTER (VOLTS)
100
1.0
0.1
1000101.0
100
10
I
C
, COLLECTOR CURRENT (AMPS)
100 mSec
10 mSec
1 Sec
100 mSec
10 mSec
1 Sec
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 17 and 18 is based on T
J(pk)
= 150°C;
T
C
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
