DDR2 SDRAM SODIMM
MT16HTS25664HY – 2GB
MT16HTS51264HY – 4GB
Features
•
200-pin, small-outline dual in-line memory module
(SODIMM)
•
Fast data transfer rates: PC2-3200, PC2-4200, or
PC2-5300
•
2GB (256 Meg x 64) or 4GB (512 Meg x 64)
•
V
DD
= V
DDQ
1.8V
•
V
DDSPD
= 1.7–3.6V
•
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•
Differential data strobe (DQS, DQS#) option
•
4n-bit prefetch architecture
•
Multiple internal device banks for concurrent opera-
tion
•
Programmable CAS latency (CL)
•
Posted CAS additive latency (AL)
•
WRITE latency = READ latency - 1
t
CK
•
Programmable burst lengths (BL): 4 or 8
•
Adjustable data-output drive strength
•
64ms, 8192-cycle refresh
•
On-die termination (ODT)
•
Serial presence detect (SPD) with EEPROM
•
Gold edge contacts
•
Dual-rank, TwinDie™ (2COB) DRAM devices
Figure 1: 200-Pin SODIMM (MO-224 R/C D)
Module height: 30mm (1.18in)
Options Marking
•
Operating temperature
1
– Commercial (0°C ≤ T
A
≤ +70°C)
None
– Industrial (–40°C ≤ T
A
≤ +85°C)
I
•
Package
–
200-pin DIMM (lead-free) Y
•
Frequency/CL
–
2.5ns @ CL 6 (DDR2-800) -800
–
3.0ns @ CL = 5 (DDR2-667) -667
–
3.75ns @ CL = 4 (DDR2-533) -53E
–
5.0ns @ CL = 3 (DDR2-400)
3
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300
–
667 553 400 15 15 55
-53E PC2-4200
– –
553 400 15 15 55
-40E PC2-3200
– –
400 400 15 15 55
2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Features
PDF: 09005aef821e5bf3
hts16c256_512x64h.pdf - Rev. E 3/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.