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TFBS6711-TR3

P1-P3P4-P6P7-P9P10-P12
Not for New Designs
TFBS6711
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 06-Sep-13
4
Document Number: 84676
For technical questions, contact: irdasupportAM@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•T
amb
= 25 °C, V
CC
= 2.4 V to 3.6 V unless otherwise noted. Typical values are for design aid only, not guaranteed nor subject to production
testing.
(1)
The typical threshold level is 0.5 x V
CC
(V
CC
= 3 V). It is recommended to use the specified min./max. values to avoid increased
operating/shutdown current.
ELECTRICAL CHARACTERISTICS
PARAMETERS TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
TRANSCEIVER
Supply voltage V
CC
2.4 3.6 V
Dynamic supply current
Receive mode only.
In transmit mode, add additional 85 mA (typ.) for IRED current.
Add RXD output current depending on RXD load.
SD = low, SIR mode I
CC
1.7 3 mA
SD = low, MIR/FIR mode I
CC
1.9 3.3 mA
Shutdown supply current
SD = high
T = 25 °C, not ambient light
sensitive, detector is disabled in
shutdown mode
I
SD
1µA
Shutdown supply current
SD = high
T = 85 °C, not ambient light
sensitive
I
SD
5µA
Operating temperature range T
A
- 25 + 85 °C
Output voltage low
I
OL
= 1 mA
C
LOAD
= 15 pF
V
OL
0.4 V
Output voltage high
I
OH
= - 250 µA
C
LOAD
= 15 pF
V
OH
0.9 x V
CC
V
Internal RXD pull-up R
RXD
400 500 600 k
Input voltage low (TXD, SD) V
IL
- 0.5 0.5 V
Input voltage high (TXD, SD) V
IH
V
CC
- 0.5 V
CC
+ 0.5 V
Input leakage current (TXD, SD)
(1)
I
ICH
- 1 0.05 + 1 µA
Input capacitance (TXD, SD) C
I
5pF
OPTOELECTRONIC CHARACTERISTICS
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
RECEIVER
Minimum irradiance E
e
in
angular range
(2)
9.6 kbit/s to 115.2 kbit/s
= 850 nm to 900 nm, V
CC
= 2.4 V
E
e
50
(5)
80
(8)
mW/m
2
(µW/cm
2
)
Minimum irradiance E
e
in
angular range MIR mode
1.152 Mbit/s
= 850 nm to 900 nm, V
CC
= 2.4 V
E
e
100
(10)
mW/m
2
(µW/cm
2
)
Minimum irradiance E
e
in
angular range FIR mode
4 Mbit/s
= 850 nm to 900 nm, V
CC
= 2.4 V
E
e
120
(12)
200
(20)
mW/m
2
(µW/cm
2
)
Maximum irradiance E
e
in
angular range
(3)
= 850 nm to 900 nm E
e
5
(500)
kW/m
2
(mW/cm
2
)
No detection receiver input
irradiance (fluorescent light
noise suppression)
E
e
4
(0.4)
mW/m
2
(µW/cm
2
)
Rise time of output signal 10 % to 90 %, C
L
= 15 pF t
r (RXD)
10 50 ns
Fall time of output signal 90 % to 10 %, C
L
= 15 pF t
f (RXD)
10 50 ns
RXD pulse width of output
signal, 50 %, SIR mode
Input pulse length
1.4 µs < P
Wopt
< 25 µs
t
PW
1.4 1.8 2.6 µs
RXD pulse width of output
signal, 50 %, MIR mode
Input pulse length
P
Wopt
= 217 ns, 1.152 Mbit/s
t
PW
110 250 270 ns
RXD pulse width of output
signal, 50 %, FIR mode
Input pulse length
P
Wopt
= 125 ns, 4 Mbit/s
t
PW
110 140 ns
Not for New Designs
TFBS6711
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 06-Sep-13
5
Document Number: 84676
For technical questions, contact: irdasupportAM@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•For more definitions see the document “Symbols and Terminology” on the Vishay website.
•T
amb
= 25 °C, V
CC
= 2.4 V to 3.6 V unless otherwise noted. Typical values are for design aid only, not guaranteed nor subject to production
testing. All timing data measured with 4 Mbit/s are measured using the IrDA FIR transmission header. The data given here are valid 5 µs after
starting the preamble.
(1)
IrDA latency definition: receiver latency allowance (milliseconds or microseconds) is the maximum time after a node ceases transmitting
before the node’s receiver recovers its specified sensitivity. During this period and also during the receiver start up time (after power on or
shutdown) the RXD output may be in an undefined state.
(2)
IrDA sensitivity definition: minimum irradiance Ee in angular range, power per unit area. The receiver must meet the BER specification while
the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum link length.
(3)
Maximum irradiance E
e
in angular range, power per unit area. The optical delivered to the detector by a source operating at the maximum
intensity in angular range at minimum link length must not cause receiver overdrive distortion and possible related link errors. If placed at
the active output interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification.
RECEIVER
RXD pulse width of output
signal, 50 %, FIR mode
Input pulse length
P
Wopt
= 250 ns, 4 Mbit/s
t
PW
225 275 ns
RXD output jitter, leading edge
Input irradiance = 150 mW/m
2
,
4 Mbit/s
1.152 Mbit/s
115.2 kbit/s
20
40
350
ns
Receiver start up time
After completion of shutdown
programming sequence
power on delay
500 µs
Latency
(1)
t
L
100 µs
TRANSMITTER
IRED operating current,
switched current control
For 3.3 V operation no external resistor is
needed
I
D
330 440 600 mA
Output leakage IRED current V
CC
= V
IRED
= 3.3 V, TXD = low I
IRED
- 1 1 µA
Output radiant intensity,
see figure 3, recommended
application circuit
V
CC
= V
IRED
= 3.3 V, a = 0°
TXD = high, SD = low, R1 = 1
I
e
45 115 300 mW/sr
Output radiant intensity,
see figure 3, recommended
application circuit
V
CC
= V
IRED
= 3.3 V, a = 0°, 15°
TXD = high, SD = low, R1 = 1
I
e
25 75 300 mW/sr
Output radiant intensity
V
CC1
= 3.6 V, a = 0°, 15°
TXD = low or SD = high
(receiver is inactive as long as SD = high)
I
e
0.04 mW/sr
Output radiant intensity, angle
of half intensity
a± 24deg
Peak - emission wavelength
p
880 900 nm
Optical rise time,
optical fall time
t
ropt
,
t
fopt
10 40 ns
Optical output pulse duration
Input pulse width 217 ns,
1.152 Mbit/s
t
opt
200 217 230 ns
Input pulse width 125 ns, 4 Mbit/s t
opt
116 125 134 ns
Input pulse width 250 ns, 4 Mbit/s t
opt
241 250 259 ns
Input pulse width t < 80 µs
Input pulse width t  80 µs
t
opt
t
opt
20
t
85
µs
Optical overshoot 25 %
OPTOELECTRONIC CHARACTERISTICS
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Not for New Designs
TFBS6711
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 06-Sep-13
6
Document Number: 84676
For technical questions, contact: irdasupportAM@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECOMMENDED CIRCUIT DIAGRAM
Operated at a clean low impedance power supply the
TFBS6711 needs no additional external components.
However, depending on the entire system design and board
layout, additional components may be required (see fig. 3).
Fig. 3 - Recommended Application Circuit
The capacitor C1 is buffering the supply voltage and
eliminates the inductance of the power supply line. This one
should be a tantalum or other fast capacitor to guarantee the
fast rise time of the IRED current.
Vishay transceivers integrate a sensitive receiver and a
built-in power driver. The combination of both needs a
careful circuit board layout. The use of thin, long, resistive
and inductive wiring should be avoided. The inputs (RXD,
SD) and the output RXD should be directly (DC) coupled to
the I/O circuit.
The capacitor C2 combined with the resistor R2 is the low
pass filter for smoothing the supply voltage.
R2, C1 and C2 are optional and dependent on the quality of
the supply voltages V
CCx
and injected noise. An unstable
power supply with dropping voltage during transmission
may reduce the sensitivity (and transmission range) of the
transceiver.
The placement of these parts is critical. It is strongly
recommended to position C2 as close as possible to the
transceiver power supply pins.
A tantalum capacitor should be used for C1 while a ceramic
capacitor is used for C2.
In addition, when connecting the described circuit to the
power supply, low impedance wiring should be used.
When extended wiring is used the inductance of the power
supply can cause dynamically a voltage drop at V
CC2
. Often
some power supplies are not able to follow the fast current
rise time. In that case another 4.7 µF (type, see table under
C1) at V
CC2
will be helpful.
Keep in mind that basic RF-design rules for circuit design
should be taken into account. Especially longer signal lines
should not be used without termination. See e.g. “The Art of
Electronics” Paul Horo-witz, Winfield Hill, 1989, Cambridge
University Press, ISBN: 0521370957.
I/O AND SOFTWARE
In the description, already different I/Os are mentioned.
Different combinations are tested and the function verified
with the special drivers available from the I/O suppliers. In
special cases refer to the I/O manual, the Vishay application
notes, or contact directly Vishay Sales, Marketing, or
Application.
MODE SWITCHING
The TFBS6711 is in the SIR mode after power on as a
default mode, therefore the FIR data transfer rate has to be
set by a programming sequence using the TXD and SD
inputs as described below. The low frequency mode covers
speeds up to 115.2 kbit/s. Signals with higher data rates
should be detected in the high frequency mode. Lower
frequency data can also be received in the high frequency
mode but with reduced sensitivity. To switch the
transceivers from low frequency mode to the high frequency
mode and vice versa, the programming sequences
described below are required.
SETTING TO THE HIGH BANDWIDTH MODE
(0.576 Mbit/s to 4 Mbit/s)
1. Set SD input to logic “high”.
2. Set TXD input to logic “high”. Wait t
s
200 ns.
3. Set SD to logic “low” (this negative edge latches state of
TXD, which determines speed setting).
4. After waiting t
h
200 ns TXD can be set to logic “low”.
The hold time of TXD is limited by the maximum allowed
pulse length.
TXD is now enabled as normal TXD input for the high
bandwidth mode.
IRED anode
V
CC
Ground
SD
TXD
RXD
V
CC2
V
CC1
GND
S
D
T
XD
RXD
R1
R2
C1
C2
C3
19299
TABLE 1 - RECOMMENDED APPLICATION
CIRCUIT COMPONENTS
COMPONENT RECOMMENDED VALUE
C1
4.7 µF, 16 V
Vishay part#:
293D 475X9 016B
C2
0.1 µF, ceramic
Vishay part#:
VJ1206 Y 104 J XXMT
R1
3.3 V supply voltage: no resistor is
necessary, the internal controller is able to
control the current
R2 4.7 , 0.125 W
P1-P3P4-P6P7-P9P10-P12

TFBS6711-TR3

Mfr. #:
Buy TFBS6711-TR3
Manufacturer:
Vishay Semiconductors
Description:
Infrared Transceivers FIR 4Mbit/s 2.4-3.6V Op Voltage
Lifecycle:
New from this manufacturer.
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