APT68GA60B2D40 Datasheet APT68GA60LD40, APT68GA60B2D40 | P1-P3

052-6341 Rev F 6 - 2011

Absolute Maximum Ratings

Symbol Parameter Ratings Unit

V

ces

Collector Emitter Voltage 600 V

I

C1

Continuous Collector Current @ T

C

= 25°C 121

A

I

C2

Continuous Collector Current @ T

C

= 100°C 68

I

CM

Pulsed Collector Current

1

202

V

GE

Gate-Emitter Voltage

2

±30 V

P

D

Total Power Dissipation @ T

C

= 25°C 520 W

SSOA Switching Safe Operating Area @ T

J

= 150°C 202A @ 600V

T

J

, T

STG

Operating and Storage Junction Temperature Range -55 to 150

°C

T

L

Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 300

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• UPS, solar, and other inverters

• High frequency, high efﬁ ciency industrial

FEATURES

• Fast switching with low EMI

• Very Low E

off

for maximum efﬁ ciency

• Ultra low C

res

for improved noise immunity

• Low conduction loss

• Low gate charge

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

POWER MOS 8

®

is a high speed Punch-Through switch-mode IGBT. Low E

off

is achieved

through leading technology silicon design and lifetime control processes. A reduced E

off

-

V

CE(ON)

tradeoff results in superior efﬁ ciency compared to other IGBT technologies. Low

gate charge and a greatly reduced ratio of C

res

/C

ies

provide excellent noise immunity, short

delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the

poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even

when switching at high frequency.

Microsemi Website - http://www.microsemi.com

High Speed PT IGBT

Static Characteristics T

J

= 25°C unless otherwise speciﬁ ed

Symbol Parameter Test Conditions Min Typ Max Unit

V

BR(CES)

Collector-Emitter Breakdown Voltage V

GE

= 0V, I

C

= 250A 600

V

CE(on)

Collector-Emitter On Voltage

V

GE

= 15 V,

I

C

= 40A

T

J

= 25°C 2.0 2.5

T

J

= 125°C 1.9

V

GE(th)

Gate Emitter Threshold Voltage V

GE

=V

CE

, I

C

= 1mA 3 4.5 6

I

CES

Zero Gate Voltage Collector Current

V

CE

= 600V,

V

GE

= 0V

T

J

= 25°C 275

A

T

J

= 125°C 3000

I

GES

Gate-Emitter Leakage Current V

GS

= ±30V ±100 nA

Combi (IGBT and Diode)

APT68GA60LD40

TO-247

APT68GA60B2D40

APT68GA60LD40

APT68GA60B2D40

600V

052-6341 Rev F 6 - 2011

Thermal and Mechanical Characteristics

Dynamic Characteristics T

J

= 25°C unless otherwise speciﬁ ed

APT68GA60L_B2D40

Symbol Characteristic Min Typ Max Unit

R

JC

Junction to Case Thermal Resistance (IGBT) - - .24

°C/W

R

JC

Junction to Case Thermal Resistance (Diode) .67

W

T

Package Weight - 6.1 - g

Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw 10 in·lbf

Symbol Parameter Test Conditions Min Typ Max Unit

C

ies

Input Capacitance Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1MHz

5230

pF

C

oes

Output Capacitance 526

C

res

Reverse Transfer Capacitance 59

Q

g

3

Total Gate Charge Gate Charge

V

GE

= 15V

V

CE

= 300V

I

C

= 40A

198

Q

ge

Gate-Emitter Charge 32

nC

Q

gc

Gate- Collector Charge 66

SSOA Switching Safe Operating Area

T

J

= 150°C, R

G

= 4.7

4

, V

GE

= 15V,

L= 100uH, V

CE

= 600V

202

A

t

d(on)

Turn-On Delay Time Inductive Switching (25°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 40A

R

G

= 4.7

4

T

J

= +25°C

21

ns

t

r

Current Rise Time 27

t

d(off)

Turn-Off Delay Time 133

t

f

Current Fall Time 88

E

on2

Turn-On Switching Energy 715

J

E

off

6

Turn-Off Switching Energy

607

t

d(on)

Turn-On Delay Time Inductive Switching (125°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 40A

R

G

= 4.7

4

T

J

= +125°C

20

ns

t

r

Current Rise Time 26

t

d(off)

Turn-Off Delay Time 175

t

f

Current Fall Time 129

E

on2

Turn-On Switching Energy 1117

J

E

off

6

Turn-Off Switching Energy

1025

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

3 See Mil-Std-750 Method 3471.

4 R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

5 E

on2

is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the

clamping diode.

6 E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

052-6341 Rev F 6 - 2011

Typical Performance Curves APT68GA60L_B2D40

0

20

40

60

80

100

120

140

25 50 75 100 125 150

0

1

2

3

4

5

0 25 50 75 100 125 150

0

5

10

15

20

0 40 80 120 160 200

0

1

2

3

4

6 8 10 12 14 16

0

40

80

120

160

200

240

0 2 4 6 8 10 12

0

50

100

150

200

250

300

350

0 4 8 12 16 20 24 28 32

0

20

40

60

80

100

120

0 1 2 3 4 5 6

250s PULSE

TEST<0.5 % DUTY

CYCLE

T

J

= 25°C.

250s PULSE TEST

<0.5 % DUTY CYCLE

V

GE

= 15V.

250s PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 20A

I

C

= 40A

I

C

= 80A

I

C

= 40A

I

C

= 80A

13V

5V

15V

I

C

= 40A

T

J

= 25°C

V

CE

= 480V

V

CE

= 300V

V

CE

= 120V

T

J

= 25°C

T

J

= -55°C

V

GE

= 15V

T

J

= 55°C

T

J

= 150°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics (T

J

= 25°C)

I

C

, COLLECTOR CURRENT (A)

T

J

= 25°C

T

J

= 125°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 2, Output Characteristics (T

J

= 25°C)

I

C

, COLLECTOR CURRENT (A)

T

J

= 125°C

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

I

C

, COLLECTOR CURRENT (A)

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

GATE CHARGE (nC)

FIGURE 4, Gate charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

T

J

, Junction Temperature (°C)

FIGURE 6, On State Voltage vs Junction Temperature

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

T

C

, Case Temperature (°C)

FIGURE 8, DC Collector Current vs Case Temperature

I

C

, DC COLLECTOR CURRENT (A)

-50 -25 0 25 50 75 100 125 150

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

T

J

, JUNCTION TEMPERATURE

FIGURE 7, Threshold Voltage vs Junction Temperature

V

GS(TH)

, THRESHOLD VOLTAGE

(NORMALIZED)

6V

7V

8V

I

C

= 20A

9V

10V

APT68GA60B2D40

APT68GA60B2D40

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