APT68GA60B2D40

052-6341 Rev F 6 - 2011
0
5
10
15
20
25
30
0 20 40 60 80
0
50
100
150
200
250
0 10 20 30 40 50 60 70 80
0
500
1000
1500
2000
2500
3000
0 25 50 75 100 125
0
1000
2000
3000
4000
5000
6000
7000
8000
0 10 20 30 40 50
0
500
1000
1500
2000
2500
3000
0 10 20 30 40 50 60 70 80
0
1000
2000
3000
0 10 20 30 40 50 60 70 80
0
20
40
60
80
100
120
140
160
0 10 20 30 40 50 60 70 80
0
10
20
30
40
50
60
70
0 10 20 30 40 50 60 70 80
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 4.7
L = 100H
V
CE
= 400V
V
GE
= +15V
R
G
=4.7
V
CE
= 400V
T
J
= 25°C, or 125°C
R
G
= 4.7
L = 100H
V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.7
V
CE
= 400V
V
GE
= +15V
R
G
= 4.7
R
G
= 4.7, L = 100H, V
CE
= 400V
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
R
G
= 4.7, L = 100H, V
CE
= 400V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
E
on2,
80A
E
on2,
40A
E
off,
40A
E
on2,
20A
E
off,
20A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
on2,
80A
E
on2,
40A
E
off,
80A
E
off,
40A
E
on2,
20A
E
off,
20A
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
t
d(ON)
, TURN-ON DELAY TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
t
d(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
t
r
, RISE TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
t
r
, FALL TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
E
on2
,
TURN ON ENERGY LOSS (J)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
E
OFF
, TURN OFF ENERGY LOSS (J)
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING ENERGY LOSSES (J)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
E
off,
80A
Typical Performance Curves APT68GA60L_B2D40
052-6341 Rev F 6 - 2011
Typical Performance Curves APT68GA60L_B2D40
0
0.05
0.10
0.15
0.20
0.25
0.30
10
-5
10
-4
10
-3
10
-2
0.1 1
10
100
1000
10000
0 100 200 300 400 500
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
C
oes
C
res
C
ies
Peak T
J
= P
DM
x Z
θJC
+T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
0.1
1
10
100
1000
1 10 100 800
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
052-6341 Rev F 6 - 2011
Figure 21, Turn-on Switching Waveforms and De nitions
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
Figure 22, Turn-off Switching Waveforms and De nitions
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
I
C
A
D.U.T.
V
CE
V
CC
APT30DQ60
Figure 20, Inductive Switching Test Circuit
APT68GA60L_B2D40

APT68GA60B2D40

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 T-MAX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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