OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STP100N6F7

P1-P3P4-P6P7-P9P10-P12P13-P13
This is information on a product in full production.
December 2014 DocID027212 Rev 2 1/13
STP100N6F7
N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Among the lowest R
DS(on)
on the market
• Excellent figure of merit (FoM)
• Low C
rss
/C
iss
ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
1
2
3
TO-220
TAB
$0Y
'7$%
*
6
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STP100N6F7 60 V 5.6 mΩ 100A 125 W
Table 1. Device summary
Order code Marking Package Packaging
STP100N6F7 100N6F7 TO-220 Tube
www.st.com
Contents STP100N6F7
2/13 DocID027212 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DocID027212 Rev 2 3/13
STP100N6F7 Electrical ratings
13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 60 V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25 °C 100 A
I
D
Drain current (continuous) at T
C
= 100 °C 75 A
I
DM
(1)
1. Pulse width is limited by safe operating area
Drain current (pulsed) 400 A
P
TOT
Total dissipation at T
C
= 25 °C 125 W
E
AS
(2)
2. Starting Tj =25 °C, I
D
= 20 A, V
DD
= 30 V
Single pulse avalanche energy 200 mJ
T
j
Operating junction temperature
- 55 to 175 °C
T
stg
Storage temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.2 °C/W
R
thj-amb
thermal resistance junction-ambient 62.5 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P13

STP100N6F7

Mfr. #:
Buy STP100N6F7
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet