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STP100N6F7

P1-P3P4-P6P7-P9P10-P12P13-P13
DocID027212 Rev 2 7/13
STP100N6F7 Electrical characteristics
13
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs
temperature
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized V
(BR)DSS
vs temperature
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Electrical characteristics STP100N6F7
8/13 DocID027212 Rev 2
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μF
V
DD
AM01469v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
V
i=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
V
G
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
R
G
G
FAST
DIODE
D
S
L=100μH
μF
3.3
1000
μF
V
DD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
V
GS
DocID027212 Rev 2 9/13
STP100N6F7 Package mechanical data
13
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
P1-P3P4-P6P7-P9P10-P12P13-P13

STP100N6F7

Mfr. #:
Buy STP100N6F7
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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