MML09231HT1
1
RF Device Data
Freescale Semiconductor, Inc.
Enhancement Mode pHEMT
Technology (E--pHEMT)
Low Noise Amplifier
The MML09231H is a single-- s tage low nois e amplifier (LNA) w ith active
bias and high isolation for us e in cellular infrastructure applications. It is
designed for a range of low noise, high linearity applic ations such as small
cell, tower mounted amplifiers (TMA) and receiv er front -- end c ircuits. It
operates from a single voltage s upply and is suitable for applic ations with
frequencies from 700 to 1400 MHz such as ISM, GSM, W--CDMA and LTE.
Features
Ultra Low Noise Figure: 0.36 dB @ 900 MHz
Frequency: 700--1400 MHz
Unconditionally Stable Over Temperature
High Reverse Isolation: --21 dB @ 900 MHz
P1dB: 24.5 dBm @ 900 MHz
Small--Signal Gain: 17.2 dB @ 900 MHz (adjustable externally)
Third Order Output Intercept Point: 37.4 dBm @ 900 MHz
Single 5 V Supply
Power--down Pin
Supply Current: 55 mA
50 Ohm Operation (some external matching required)
Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
DFN 2 2
700--1400 MHz, 17.2 dB
24.5dBm,0.36dBNF
E--pHEMT LNA
MML09231HT1
Table 1. Typical Performance
(1)
Characteristic Symbol
700
MHz
900
MHz
1400
MHz
Unit
Noise Figure
(2a)
NF 0.46
(b)
0.36
(b)
0.45
(b)
dB
Input Return Loss
(S11)
IRL -- 1 7 -- 1 5 -- 1 4 dB
Output Return Loss
(S22)
ORL -- 1 4 -- 1 5 -- 1 5 dB
Small--Signal Gain
(S21)
G
p
19 17.2 13.2 dB
Power Output @
1dB Compression
P1dB 24 24.5 24 dBm
Third Order Input
Intercept Point
IIP3 17 20.2 23.8 dBm
Third Order Output
Intercept Point
OIP3 36 37.4 37 dBm
1. V
DD
=5Vdc,T
A
=25C, 50 ohm system, application circuit
tuned for specified frequency.
2. (a) Noise figure value calculated with connector losses
removed. (b) Z
in
=50.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
DD
6 V
Supply Current I
DD
150 mA
RF Input Power P
in
20 dBm
Storage Temperature Range T
stg
--65 to +150 C
Junction Temperature T
J
175 C
Table 3. Thermal Characteristics
Characteristic Symbol Value
(3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 V dc, 55 mA, no RF applied
R
JC
77 C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Freescale Semiconductor
Technical Data
Document Number: MML09231H
Rev. 1, 9/2014
Freescale Semiconductor, Inc., 2013--2014.
ll rights reserved.
