OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MML09231HT1

P1-P3P4-P6P7-P9P10-P12
4
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
50 OHM APPLICATION CIRCUIT: 900 MHz
V
DD
POWER
DOWN
R1
R2
C6
C5
C4
C3
C1 L1
C2L2
RF
IN
RF
OUT
DFN 2x2--8N
Rev. 0
Figure 3. MML09231H Test Circuit Component Layout
NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply
decoupling and grounding are employed.
Table 8. MML09231H Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 100 pF Chip Capacitor GRM1555C1H101JA01 Murata
C2 180 pF Chip Capacitor GRM1555C1H181JA01 Murata
C3 27 pF Chip Capacitor GRM1555C1H270JA01 Murata
C4 220 pF Chip Capacitor GRM1555C1H221JA01 Murata
C5, C6 1000 pF Chip Capacitors GRM1885C1H102JA01 Murata
L1 20 nH Chip Inductor 0402HP-20NXGLW Coilcraft
L2 47 nH Chip Inductor 0402HP-47NXGLW Coilcraft
R1
4.7 k 1/10 W Chip Resistor
CR21-472J-B Kyocera
R2
0 , 1 A Chip Resistor
CR0402-J/-000GLFCT Bourns
PCB
0.02,
r
=3.50
RO4350B Rogers
(Test Circuit Component Designations and Values repeated for reference.)
MML09231HT1
5
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
0
35
30
25
20
10
5
15
1400700 840 980 1120 1260
-- 2 6
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
-- 2 4
Figure 4. S11 versus Frequency versus
Temperature
1400
-- 2 8
0
700
f, FREQUENCY (MHz)
840
-- 4
-- 8
-- 1 2
-- 1 6
-- 2 0
-- 2 4
S11 (dB)
980 1120 1260
Figure 5. S12 versus Frequency versus
Temperature
f, FREQUENCY (MHz)
S12 (dB)
-- 4 0 C
85C
Figure 6. S21 versus Frequency versus
Temperature
10
24
f, FREQUENCY (MHz)
22
20
18
14
12
S21 (dB)
16
Figure 7. S22 versus Frequency versus
Temperature
f, FREQUENCY (MHz)
S22 (dB)
1400700 840 980 1120 1260
V
DD
=5Vdc
25C
25C
85C
V
DD
=5Vdc
-- 2 6
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
-- 2 4
1400700 840 980 1120 1260
V
DD
=5Vdc
V
DD
=5Vdc
V
DD
=5Vdc
-- 4 0 C-- 4 0 C
-- 4 0 C
85C
25C
25C
85C
25C
-- 4 0 C
6
RF Device Data
Freescale Semiconductor, Inc.
MML09231HT1
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
0.9
Figure 8. Noise Figure versus Frequency
versus Temperature
f, FREQUENCY (MHz)
1.5
0.5
NF, NOISE FIGURE (dB)
1.3
0.7
0.3
1.1
0.1
700 840 980 1120
1260
1400
-- 4 0 C
Figure 9. Third Order Output Intercept Point
(Two--Tone) versus Frequency versus Temperature
f, FREQUENCY (MHz)
42
32
36
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
40
34
30
38
28
700 840 980 1120 1260 1400
Figure 10. P1dB versus Frequency versus
Temperature, CW
f, FREQUENCY (MHz)
27
26
25
22
24
21
23
28
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
700 840 980 1120 1260 1400
25C
85C
V
DD
=5Vdc
1 MHz Tone Spacing
25C
85C
-- 4 0 C
-- 4 0 C
25C
V
DD
=5Vdc
V
DD
=5Vdc
85C
P1-P3P4-P6P7-P9P10-P12

MML09231HT1

Mfr. #:
Buy MML09231HT1
Manufacturer:
NXP / Freescale
Description:
RF Amplifier 21DBM GAAS AMP DFN2X2-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet