SS5P3-E3/87A Datasheet IXFN132N50P3, SS5P4-E3/86A, SS5P4-E3/87A | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 500 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 500 V

V

GSS

Continuous 30 V

V

GSM

Transient 40 V

I

D25

T

C

= 25C 112 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

330 A

I

A

T

C

= 25C 66A

E

AS

T

C

= 25C2J

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150C 35 V/ns

P

D

T

C

= 25C 1500 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

V

ISOL

50/60 Hz, RMS, t = 1minute 2500 V~

I

ISOL

1mA, t = 1s 3000 V~

M

d

Mounting Torque for Base Plate 1.5/13 Nm/lb.in

Terminal Connection Torque 1.3/11.5 Nm/lb.in

Weight 30 g

Symbol Test Conditions Characteristic Values

(T

J

= 25C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 3.0 5.0 V

I

GSS

V

GS

= 30V, V

DS

= 0V 200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 50 A

T

J

= 125C 3 mA

R

DS(on)

V

GS

= 10V, I

D

= 66A, Note 1 39 m

IXFN132N50P3

V

DSS

= 500V

I

D25

= 112A

R

DS(on)



 39m





t

rr



 250ns

DS100316B(6/14)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Polar3

TM

HiPerFET

TM

Power MOSFET

miniBLOC

E153432

G

D

S

G = Gate D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

Features



International Standard Package



miniBLOC with Aluminum Nitride

Isolation



Avalanche Rated



Low Package Inductance



Fast Intrinsic Rectifier



Low R

DS(on)

and Q

G

Advantages



Easy to Mount



Space Savings

Applications



DC-DC Converters



Battery Chargers



Switch-Mode and Resonant-Mode

Power Supplies



Uninterrupted Power Supplies



AC Motor Drives



High Speed Power Switching

Applications

S

D

G

IXFN132N50P3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t  300s, duty cycle, d  2%.

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

Symbol Test Conditions Characteristic Values

(T

J

= 25C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 68 110 S

C

iss

18.6 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1710 pF

C

rss

12 pF

R

Gi

Gate Input Resistance 1.16 

t

d(on)

42 ns

t

r

18 ns

t

d(off)

90 ns

t

f

15 ns

Q

g(on)

267 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 66A 95 nC

Q

gd

63 nC

R

thJC

0.083C/W

R

thCS

0.05 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 132 A

I

SM

Repetitive, Pulse Width Limited by T

JM

530 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.5 V

t

rr

250 ns

Q

RM

1.9 C

I

RM

16.4

A

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 66A

R

G

= 1 (External)

I

F

= 66A, -di/dt = 100A/s

V

R

= 100V, V

GS

= 0V

IXFN132N50P3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

0123456

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

5V

6V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

0 5 10 15 20 25

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

20

40

60

80

100

120

140

0 2 4 6 8 10 12 14

V

DS

- Volts

I

D

- Amperes

5V

6V

V

GS

= 10V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 66A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 132A

I

D

= 66A

Fig. 5. R

DS(on)

Normalized to I

D

= 66A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 50 100 150 200 250

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

20

40

60

80

100

120

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

SS5P3-E3/87A

SS5P3-E3/87A

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