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SS5P3-E3/87A

P1-P3P4-P6
IXFN132N50P3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 66A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2014 IXYS CORPORATION, All Rights Reserved
IXFN132N50P3
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
10
12
14
16
18
20
22
24
26
28
30
30 40 50 60 70 80 90 100
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
50
100
150
200
250
300
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
20
40
60
80
100
120
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 250V
I
D
= 100A
I
D
= 66A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
10
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
85
90
95
100
105
110
115
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 250V
I
D
= 100A
I
D
= 66A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
12
14
16
18
20
22
24
26
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 250V
I
D
= 100A
I
D
= 66A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
5
10
15
20
25
30
35
30 40 50 60 70 80 90 100
I
D
- Amperes
t
f
- Nanoseconds
70
80
90
100
110
120
130
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
50
100
150
200
250
300
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
80
160
240
320
400
480
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 250V
I
D
= 66A
I
D
= 100A
IXFN132N50P3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_132N50P3(K9-W38) 6-02-14-A
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 19. Maximum Transient Thermal Impedance
AAAAA
0.2
P1-P3P4-P6

SS5P3-E3/87A

Mfr. #:
Buy SS5P3-E3/87A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 625-SS5P3-M3/87A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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