CY7C1041D
Document Number: 38-05472 Rev. *I Page 13 of 16
Acronyms Document Conventions
Units of Measure
Acronym Description
CE
Chip Enable
CMOS Complementary Metal Oxide Semiconductor
I/O Input/Output
OE
Output Enable
SRAM Static Random Access Memory
SOJ Small Outline J-Lead
TSOP Thin Small Outline Package
VFBGA Very Fine-Pitch Ball Grid Array
Symbol Unit of Measure
°C degree Celsius
MHz megahertz
μA microampere
mA milliampere
mV millivolt
mW milliwatt
ns nanosecond
pF picofarad
Vvolt
Wwatt
CY7C1041D
Document Number: 38-05472 Rev. *I Page 14 of 16
Document History Page
Document Title: CY7C1041D, 4-Mbit (256 K × 16) Static RAM
Document Number: 38-05472
Revision ECN
Orig. of
Change
Submission
Date
Description of Change
** 201560 SWI See ECN Advance Datasheet for C9 IPP
*A 233729 RKF See ECN 1.AC, DC parameters are modified as per EROS (Spec #01-2165)
2.Pb-free offering in the ‘ordering information’
*B 351117 PCI See ECN Changed from Advance to Preliminary
Removed 17 and 20 ns Speed bin
Added footnote # 4
Redefined I
CC
values for Com’l and Ind’l temperature ranges
I
CC
(Com’l): Changed from 67 and 54 mA to 75 and 70 mA for 12 and 15 ns
speed bins respectively
I
CC
(Ind’l): Changed from 80, 67 and 54 mA to 90, 85 and 80 mA for 10, 12 and
15 ns speed bins respectively
Changed footnote # 10 on t
R
Changed t
SCE
from 8 to 7 ns for 10 ns speed bin
Added Static Discharge Voltage and latch-up current spec
Added V
IH(max
) spec in footnote # 2
Changed reference voltage level for measurement of Hi-Z parameters from
r500 mV to r200 mV
Added Write Cycle (WE
Controlled, OE HIGH During Write) Timing Diagram
Changed part names from Z to ZS in the Ordering Information Table
Removed L-Version
Added 10 ns parts in the Ordering Information Table
Added Lead-Free Ordering Information
Shaded Ordering Information Table
*C 446328 NXR See ECN Converted Preliminary to Final
Removed -15 speed bin
Removed Commercial Operating Range product information
Added Automotive Operating Range product information
Changed Maximum Rating for supply voltage from 7 V to 6 V
Updated Thermal Resistance table
Changed t
HZWE
from 6 ns to 5 ns
Updated footnote #8 on High-Z parameter measurement
Updated the Ordering Information and replaced Package Name column with
Package Diagram in the Ordering Information table
*D 2897049 VKN 03/22/10 Removed inactive parts from the ordering information table.
*E 3109184 AJU 12/13/2010 Added Ordering Code Definitions.
*F 3236731 PRAS 04/21/2011 Template updates.
Added acronyms and units tables.
*G 4040855 MEMJ 06/27/2013 Updated Functional Description.
Updated Electrical Characteristics:
Added one more Test Condition “V
CC
= Max, I
OH
= –0.1mA” for V
OH
parameter
and added maximum value corresponding to that Test Condition.
Added Note 4 and referred the same note in maximum value for V
OH
parameter
corresponding to Test Condition “V
CC
= Max, I
OH
= –0.1mA”.
Updated Package Diagrams:
spec 51-85082 – Changed revision from *C to *E.
spec 51-85087 – Changed revision from *C to *E.
Updated in new template.
CY7C1041D
Document Number: 38-05472 Rev. *I Page 15 of 16
*H 4390998 MEMJ 05/27/2014 Updated Switching Characteristics:
Updated Note 16 (Replaced “Write Cycle No. 3” with “Write Cycle No. 4”).
Updated Switching Waveforms:
Added Note 26 and referred the same note in Figure 9.
Completing Sunset Review.
*I 4578500 MEMJ 11/24/2014 Added related documentation hyperlink in page 1.
Document History Page(continued)
Document Title: CY7C1041D, 4-Mbit (256 K × 16) Static RAM
Document Number: 38-05472
Revision ECN
Orig. of
Change
Submission
Date
Description of Change

CY7C1041D-10VXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 4Mb 10ns 256K x 16 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union