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CY7C1041D-10VXI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
CY7C1041D
Document Number: 38-05472 Rev. *I Page 4 of 16
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 qC to +150 qC
Ambient Temperature with
Power Applied ......................................... –55 qC to +125 qC
Supply Voltage on
V
CC
to Relative GND
[3]
...............................–0.5 V to +6.0 V
DC Voltage Applied to Outputs
in High Z State
[3]
.................................–0.5 V to V
CC
+0.5 V
DC Input Voltage
[3]
.............................–0.5 V to V
CC
+0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) .......................... >2001 V
Latch-up Current .....................................................>200 mA
Operating Range
Range
Ambient
Temperature
V
CC
Speed
Industrial –40 qC to +85 qC5 V r 0.5 10 ns
Automotive –40 qC to +125 qC 5 V r 0.5 12 ns
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
-10 (Industrial) -12 (Automotive)
Unit
Min Max Min Max
V
OH
Output HIGH Voltage V
CC
= Min I
OH
= –4.0 mA 2.4 – 2.4 –V
V
CC
= Max I
OH
= –0.1mA – 3.4
[4]
– 3.4
[4]
V
OL
Output LOW Voltage V
CC
= Min I
OL
= 8.0 mA – 0.4 – 0.4 V
V
IH
Input HIGH Voltage 2.0 V
CC
+ 0.5 2.0 V
CC
+ 0.5 V
V
IL
Input LOW Voltage
[3]
–0.5 0.8 –0.5 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 –1 +1 PA
I
OZ
Output Leakage Current GND < V
OUT
< V
CC
,
Output Disabled
–1 +1 –1 +1 PA
I
CC
V
CC
Operating Supply Current V
CC
= Max,
f = f
MAX
= 1/t
RC
100 MHz – 90 – –mA
83 MHz – 80
– 95 mA
66 MHz – 70
– 85 mA
40 MHz – 60
– 75 mA
I
SB1
Automatic CE Power-Down
Current – TTL Inputs
Max V
CC
, CE > V
IH
,
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
–20– 25 mA
I
SB2
Automatic CE Power-Down
Current – CMOS Inputs
Max V
CC
, CE > V
CC
– 0.3 V,
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V, f = 0
–10
– 15 mA
CY7C1041D
Document Number: 38-05472 Rev. *I Page 5 of 16
Capacitance
Parameter
[5]
Description Test Conditions Max Unit
C
IN
Input capacitance T
A
= 25 qC, f = 1 MHz, V
CC
= 5.0 V 8 pF
C
OUT
I/O capacitance 8pF
Thermal Resistance
Parameter
[5]
Description Test Conditions
44-pin SOJ
Package
44-pin TSOP II
Package
Unit
4
JA
Thermal resistance
(junction to ambient)
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
57.91 50.66 qC/W
4
JC
Thermal resistance
(junction to case)
36.73 17.17 qC/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
[6]
90%
10%
3.0 V
GND
90%
10%
ALL INPUT PULSES
5 V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(c)
d3 ns d 3
ns
OUTPUT
R1 481:
R2
255:
167:
Equivalent to: VENIN EQUIVALENT
1.73 V
THÉ
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
30 pF*
OUTPUT
Z = 50:
50 :
1.5 V
(a)
High-Z Characteristics:
(b)
10 ns device
Notes
5. Tested initially and after any design or process changes that may affect these parameters.
6. AC characteristics (except High-Z) are tested using the load conditions shown in Figure 2 (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure 2 (c)
CY7C1041D
Document Number: 38-05472 Rev. *I Page 6 of 16
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions
[7]
Min Max Unit
V
DR
V
CC
for Data Retention 2.0 – V
I
CCDR
Data Retention Current V
CC
= V
DR
= 2.0 V,
CE
> V
CC
– 0.3 V,
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V
Industrial – 10 mA
I
CCDR
Data Retention Current Automotive – 15 mA
t
CDR
[8]
Chip Deselect to Data Retention
Time
0–ns
t
R
[9]
Operation Recovery Time t
RC
–ns
Data Retention Waveform
Figure 3. Data Retention Waveform
4.5 V4.5 V
t
CDR
V
DR
> 2 V
DATA RETENTION MODE
t
R
CE
V
CC
Notes
7. No input may exceed V
CC
+ 0.5 V.
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(Min)
> 50 Ps or stable at V
CC(Min)
> 50 Ps.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

CY7C1041D-10VXI

Mfr. #:
Buy CY7C1041D-10VXI
Manufacturer:
Cypress Semiconductor
Description:
SRAM 4Mb 10ns 256K x 16 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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