2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
DSS
Max (mA)
2N4338 −0.3 to −1 −50 0.6 0.6
2N4339 −0.6 to −1.8 −50 0.8 1.5
2N4340 −1 to −3 −50 1.3 3.6
2N4341 −2 to −6 −50 2 9
FEATURES BENEFITS APPLICATIONS
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: A
V
= 80 @ 20 A
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage −50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 175_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106.