2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
500
0 −0.3−0.2−0.1 −0.4 −0.5
400
300
200
100
0
Transfer Characteristics
V
GS
− Gate-Source Voltage (V)
T
A
= −55_C
125_C
V
GS(off)
= −0.7 V V
DS
= 10 V
25_C
1.5
0 −0.3 −0.4−0.2−0.1 −0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
V
GS(off)
= −0.7 V
T
A
= −55_C
125_C
V
GS
− Gate-Source Voltage (V)
V
DS
= 10 V
f = 1 kHz
25_C
2
0 −1.2 −1.6 −2−0.8−0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
V
GS
− Gate-Source Voltage (V)
T
A
= −55_C
125_C
V
GS(off)
= −1.5 V
25_C
V
DS
= 10 V
4
−1.2 −2−1.6−0.8−0.40
3.2
2.4
1.6
0.8
0
Transconductance vs. Gate-Source Voltage
V
GS(off)
= −1.5 V
T
A
= −55_C
125_C
V
GS
− Gate-Source Voltage (V)
25_C
V
DS
= 10 V
f = 1 kHz
0.1 10.01 0.01 0.1 1
200
160
120
80
40
0
2000
1600
1200
800
400
0
I
D
− Drain Current (mA)
A
V
+
g
fs
R
L
1 ) R
L
g
os
R
L
+
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
GS(off
)
= −0.7 V
−1.5 V
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
I
D
− Drain Current (mA)
T
A
= 25_C
V
GS(off)
= −0.7 V
−1.5 V
I
D
− Drain Current (µA)
I
D
− Drain Current (mA)
r
DS(on)
− Drain-Source On-Resistance ( Ω )
g
fs
− Forward Transconductance (mS)
g
fs
− Forward Transconductance (mS)
A
V
− Voltage Gain
