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2N4339-2

P1-P3P4-P6P7-P7
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
DSS
Max (mA)
2N4338 −0.3 to −1 −50 0.6 0.6
2N4339 −0.6 to −1.8 −50 0.8 1.5
2N4340 −1 to −3 −50 1.3 3.6
2N4341 −2 to −6 −50 2 9
FEATURES BENEFITS APPLICATIONS
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: A
V
= 80 @ 20 A
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
23
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage −50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 175_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipation
a
300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106.
2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
2
Document Number: 70240
S-40990—Rev. F, 24-May-04
SPECIFICATIONS FOR 2N4338 AND 2N4339 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V
(BR)GSS
I
G
= −1 A , V
DS
= 0 V
−57 −50 −50
V
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 0.1 A
−0.3 −1 −0.6
−1.8
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V 0.2 0.6 0.5 1.5 mA
Gate Reverse Current
I
GSS
V
GS
= −30 V, V
DS
= 0 V −2 −100 −100 pA
Gate Reverse Current I
GSS
T
A
= 150_C
−4 −100
−100
nA
Gate Operating Current
b
I
G
V
DG
= 15 V, I
D
= 0.1 mA −2
pA
Drain Cutoff Current I
D(off)
V
DS
= 15 V, V
GS
= −5 V 2 50 50
pA
Gate-Source Forward Voltage
c
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 15 V V
GS
= 0 V f = 1 kHz
0.6 1.8 0.8 2.4 mS
Common-Source
Output Conductance
g
os
V
DS
= 15 V, V
GS
= 0 V, f = 1 kHz
5 15
S
Drain-Source On-Resistance r
ds(on)
V
DS
= 0 V, V
GS
= 0 V, f = 1 kHz 2500 1700
Common-Source
Input Capacitance
C
iss
V
DS
= 15 V V
GS
= 0 V f = 1 MHz
5 7 7
pF
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1.5 3 3
pF
Equivalent Input Noise Voltage
c
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz 6
nV⁄
√Hz
Noise Figure NF
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz, R
G
= 1 M
1 1 dB
SPECIFICATIONS FOR 2N4340 AND 2N4341 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V
(BR)GSS
I
G
= −1 A , V
DS
= 0 V
−57 −50 −50
V
Gate-Source Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 0.1 A
−1 −3
−2
−6
V
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V 1.2 3.6 3 9 mA
Gate Reverse Current
I
GSS
V
GS
= −30 V, V
DS
= 0 V −2 −100 −100 pA
Gate Reverse Current I
GSS
T
A
= 150_C
−4 −100 −100 nA
Gate Operating Current
b
I
G
V
DG
= 15 V, I
D
= 0.1 mA −2
Drain Cutoff Current
I
D( ff)
V
DS
= 15 V
V
GS
= −5 V 2 50
pA
Drain Cutoff Current I
D(off)
V
DS
= 15 V
V
GS
= −10 V 3 70
p
Gate-Source Forward Voltage V
GS(F)
I
G
= 1 mA , V
DS
= 0 V 0.7 V
2N4338/4339/4340/4341
Vishay Siliconix
Document Number: 70240
S-40990—Rev. F, 24-May-04
www.vishay.com
3
SPECIFICATIONS FOR 2N4340 AND 2N4341 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance
g
fs
1.3 3 2 4 mS
Common-Source
Output Conductance
g
os
V
DS
= 15 V, V
GS
= 0 V, f = 1 kHz
30 60
S
Drain-Source On-Resistance r
ds(on)
V
DS
= 0 V, V
GS
= 0 V, f = 1 kHz 1500 800
Common-Source
Input Capacitance
C
iss
5 7 7
pF
Common-Source
Reverse Transfer Capacitance
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1.5 3 3
pF
Equivalent Input Noise Voltage
c
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz 6
nV⁄
√Hz
Noise Figure NF
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz, R
G
= 1 M
1 1 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA
b. Pulse test: PW v300 s, duty cycle v3%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
10
0
8
6
4
2
0 −5−4−3−2−10181262430
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
V
GS(off)
− Gate-Source Cutoff Voltage (V) V
DG
− Drain-Gate Voltage (V)
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
I
GSS
@ 125_C
I
GSS
@ 25_C
T
A
= 125_C
T
A
= 25_C
500 mA
500 mA
I
D
= 100 mA
I
D
= 100 mA
g
fs
− Forward Transconductance (mS)
I
DSS
− Saturation Drain Current (mA)
I
G
− Gate Leakage (A)
P1-P3P4-P6P7-P7

2N4339-2

Mfr. #:
Buy 2N4339-2
Manufacturer:
Vishay
Description:
MOSFET N-CH 50V 1.5MA TO-206AA
Lifecycle:
New from this manufacturer.
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