NXP Semiconductors
BGU8062
low-noise high-linearity amplifier
BGU8062 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 24 January 2017
10 / 18
aaa-018504
0 0.8 1.6 2.4 3.2 4
-30
-20
-10
0
10
20
30
f (GHz)
s-pars
(dB)
(1)(1)
(2)(2)
(3)(3)
(4)(4)
V
CC
= 5 V; T
amb
= 25°C; gain mode.
(1) S
11
(2) S
21
(3) S
12
(4) S
22
Figure 19. Wideband S-parameters as a function of
frequency; typical values
aaa-018505
0 0.5 1 1.5 2 2.5 3 3.5 4
-40
-30
-20
-10
0
f (GHz)
s-parss-pars
(dB)(dB)
(1)(1)
(2)(2)
(3)(3)
(4)(4)
V
CC
= 5 V; T
amb
= 25°C; bypass mode.
(1) S
11
(2) S
21
(3) S
12
(4) S
22
Figure 20. Wideband S-parameters as a function of
frequency; typical values
aaa-018506
0 0.5 1 1.5 2 2.5 3 3.5 4
-50
-40
-30
-20
-10
0
f (GHz)
s-pars
(dB)
(1)(1)
(2)(2)
(3)(3)
(4)(4)
V
CC
= 5 V; T
amb
= 25°C; isolation mode.
(1) S
11
(2) S
21
(3) S
12
(4) S
22
Figure 21. Wideband S-parameters as a function of
frequency; typical values
aaa-018507
0 4 8 12 16 20
0
1
2
3
4
5
f (GHz)
K
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V; gain mode.
(1) T
amb
=-40°C
(2) T
amb
= +25°C
(3) T
amb
= +95°C
Figure 22. Rollett stability factor as a function of
frequency; typical values
NXP Semiconductors
BGU8062
low-noise high-linearity amplifier
BGU8062 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 24 January 2017
11 / 18
aaa-018508
1.5 1.7 1.9 2.1 2.3 2.5 2.7
25
27.5
30
32.5
35
37.5
40
f (GHz)
IP3
O
(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V; gain mode.
(1) T
amb
=-40°C
(2) T
amb
= +25°C
(3) T
amb
= +95°C
Figure 23. Output third-order intercept point as a
function of frequency; typical values
aaa-018509
1.5 1.7 1.9 2.1 2.3 2.5 2.7
25
27.5
30
32.5
35
37.5
40
f (GHz)
IP3
O
(dBm)
(1)(1)
(2)(2)
(3)(3)
T
amb
= 25°C; gain mode.
(1) V
CC
= 4.75 V
(2) V
CC
= 5.0 V
(3) V
CC
= 5.25 V
Figure 24. Output third-order intercept point as a
function of frequency; typical values
aaa-018510
1.5 1.7 1.9 2.1 2.3 2.5 2.7
35
37.5
40
42.5
45
47.5
50
f (GHz)
IP3
O
(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V; bypass mode.
(1) T
amb
=-40°C
(2) T
amb
= +25°C
(3) T
amb
= +95°C
Figure 25. Output third-order intercept point as a
function of frequency; typical values
aaa-018511
1.5 1.7 1.9 2.1 2.3 2.5 2.7
35
37.5
40
42.5
45
47.5
50
f (GHz)
IP3
O
(dBm)
(1)(1)
(2)(2)
(3)(3)
T
amb
= 25°C; bypass mode.
(1) V
CC
= 4.75 V
(2) V
CC
= 5.0 V
(3) V
CC
= 5.25 V
Figure 26. Output third-order intercept point as a
function of frequency; typical values
NXP Semiconductors
BGU8062
low-noise high-linearity amplifier
BGU8062 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 2 — 24 January 2017
12 / 18
aaa-018512
1.5 1.7 1.9 2.1 2.3 2.5 2.7
15
17
19
21
23
25
f (GHz)
P
L(1dB)
(dBm)
(1)(1)
(2)(2)
(3)(3)
V
CC
= 5 V; gain mode.
(1) T
amb
=-40°C
(2) T
amb
= +25°C
(3) T
amb
= +95°C
Figure 27. Output power at 1 dB gain compression as a
function of frequency; typical values
aaa-018513
1.5 1.7 1.9 2.1 2.3 2.5 2.7
15
17
19
21
23
25
f (GHz)
P
L(1dB)
(dBm)
(1)(1)
(2)(2)
(3)(3)
T
amb
= 25°C; gain mode.
(1) V
CC
= 4.75 V
(2) V
CC
= 5.0 V
(3) V
CC
= 5.25 V
Figure 28. Output power at 1 dB gain compression as a
function of frequency; typical values

BGU8062J

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier Low Noise High Linearity Amplifier
Lifecycle:
New from this manufacturer.
Delivery:
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