IRF9Z34NPbF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage -1.6 V T
J
= 25°C, I
S
= -10A, V
GS
= 0V
t
rr
Reverse Recovery Time 54 82 ns T
J
= 25°C, I
F
= -10A
Q
rr
Reverse RecoveryCharge 110 160 nC di/dt = -100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -55 V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient -0.05 V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance 0.10 Ω V
GS
= -10V, I
D
= -10A
V
GS(th)
Gate Threshold Voltage -2.0 -4.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 4.2 S V
DS
= 25V, I
D
= -10A
-25
µA
V
DS
= -55V, V
GS
= 0V
-250 V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 35 I
D
= -10A
Q
gs
Gate-to-Source Charge 7.9 nC V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge 16 V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 13 V
DD
= -28V
t
r
Rise Time 55 I
D
= -10A
t
d(off)
Turn-Off Delay Time 30 R
G
= 13Ω
t
f
Fall Time 41 R
D
= 2.6Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 620 V
GS
= 0V
C
oss
Output Capacitance 280 pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -10A, di/dt ≤ -290A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L = 3.6mH
R
G
= 25Ω, I
AS
= -10A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-19
-68
