IRF9Z34NPBF

P1-P3 P4-P6 P7-P9

IRF9Z34NPbF

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

4

8

12

16

20

0 10203040

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

FOR TEST CIRCUIT

SEE FIGURE 13

I = -10A

V = -44V

V = -28V

D

DS

DS

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

T = 25°C

J

V = 0V

GS

SD

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

T = 175°C

J

1

10

100

1000

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10ms

A

-I , Drain Current (A)

-V , Drain-to-Source Voltage (V)

DS

D

10µs

100µs

1ms

T = 25°C

T = 175°C

Single Pulse

C

J

0

200

400

600

800

1000

1200

1 10 100

C, Capacitance (pF)

A

DS

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

IRF9Z34NPbF

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

V

DS

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

V

DD

R

G

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

0

5

10

15

20

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

IRF9Z34NPbF

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Q

G

Q

GS

Q

GD

V

G

Charge

-10V

D.U.T.

V

DS

I

D

I

G

-3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(

BR

)

DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

0

100

200

300

400

500

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

I

TOP -4.2A

-7.2A

BOTTOM -10A

D

P1-P3 P4-P6 P7-P9

IRF9Z34NPBF

Mfr. #:

Buy IRF9Z34NPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT PCh -55V -17A 100mOhm 23.3nC

Lifecycle:

New from this manufacturer.

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IRF9Z34NPBF