SGP20N60HS
SGW20N60HS
Power Semiconductors
1 Rev 2.4 Sep 08
High Speed IGBT in NPT-technology
• 30% lower E
off
compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1
for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
CE
I
C
E
off
T
j
Marking Package
SGP20N60HS 600V 20 240µJ
150°C
G20N60HS PG-TO-220-3-1
SGW20N60HS 600V 20 240µJ
150°C
G20N60HS PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CE
600 V
DC collector current
T
C
= 25°C
T
C
= 100°C
I
C
36
20
Pulsed collector current, t
p
limited by T
jmax
I
Cpuls
80
Turn off safe operating area
V
CE
≤ 600V, T
j
≤ 150°C
-
80
A
Avalanche energy single pulse
I
C
= 20A, V
CC
=50V, R
GE
=25Ω
start T
J
=25°C
E
AS
115 mJ
Gate-emitter voltage static
transient (t
p
<1µs, D<0.05)
V
GE
±20
±30
V
Short circuit withstand time
2)
V
GE
= 15V, V
CC
≤ 600V, T
j
≤ 150°C
t
SC
10
µs
Power dissipation
T
C
= 25°C
P
tot
178 W
Operating junction and storage temperature
T
j
,
T
stg
-55...+150
Time limited operating junction temperature for t < 150h T
j(tl)
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3
PG-TO-220-3-1
